NL7501553A - Meerderheidsladingdrager-halfgeleider-structuur. - Google Patents
Meerderheidsladingdrager-halfgeleider-structuur.Info
- Publication number
- NL7501553A NL7501553A NL7501553A NL7501553A NL7501553A NL 7501553 A NL7501553 A NL 7501553A NL 7501553 A NL7501553 A NL 7501553A NL 7501553 A NL7501553 A NL 7501553A NL 7501553 A NL7501553 A NL 7501553A
- Authority
- NL
- Netherlands
- Prior art keywords
- guide structure
- majority carrier
- carrier semi
- semi
- majority
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/441,675 US3940783A (en) | 1974-02-11 | 1974-02-11 | Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7501553A true NL7501553A (nl) | 1975-08-13 |
Family
ID=23753833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7501553A NL7501553A (nl) | 1974-02-11 | 1975-02-10 | Meerderheidsladingdrager-halfgeleider-structuur. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3940783A (nl) |
JP (1) | JPS50116185A (nl) |
CA (1) | CA1015462A (nl) |
GB (1) | GB1473996A (nl) |
NL (1) | NL7501553A (nl) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2759763C2 (de) * | 1976-03-24 | 1985-02-28 | N.V. Philips' Gloeilampenfabrieken, Eindhoven | Transistor |
GB1573309A (en) * | 1976-03-24 | 1980-08-20 | Mullard Ltd | Semiconductor devices and their manufacture |
GB2056166B (en) * | 1979-08-08 | 1983-09-14 | Philips Electronic Associated | Hot-electron or hot-hole transistor |
JPS5691478A (en) * | 1979-12-26 | 1981-07-24 | Hitachi Ltd | Manufacture of punch-through type diode |
US4410902A (en) * | 1981-03-23 | 1983-10-18 | The United States Of America As Represented By The Secretary Of The Army | Planar doped barrier semiconductor device |
GB2121600A (en) * | 1982-05-10 | 1983-12-21 | Philips Electronic Associated | Gate controlled unipolar hot-carrier transistors |
US4839709A (en) * | 1985-07-12 | 1989-06-13 | Hewlett-Packard Company | Detector and mixer diode operative at zero bias voltage |
EP0235248B1 (en) * | 1985-07-12 | 1995-03-01 | Hewlett-Packard Company | Detector and mixer diode operative at zero bias voltage and fabrication process therefor |
GB8817459D0 (en) * | 1988-07-22 | 1988-08-24 | Gen Electric | Semiconductor devices |
WO2006100657A1 (en) * | 2005-03-22 | 2006-09-28 | University College Cork - National University Of Ireland, Cork | A diode structure |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383571A (en) * | 1965-07-19 | 1968-05-14 | Rca Corp | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
US3469117A (en) * | 1966-01-08 | 1969-09-23 | Nippon Telegraph & Telephone | Electric circuit employing semiconductor devices |
US3427515A (en) * | 1966-06-27 | 1969-02-11 | Rca Corp | High voltage semiconductor transistor |
JPS4828114B1 (nl) * | 1966-10-29 | 1973-08-29 | ||
US3882529A (en) * | 1967-10-06 | 1975-05-06 | Texas Instruments Inc | Punch-through semiconductor diodes |
BE758682A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un transistor a socle |
US3665266A (en) * | 1970-12-10 | 1972-05-23 | Motorola Inc | Low saturation resistance,low offset voltage,monolithic analog switch |
US3855605A (en) * | 1972-06-19 | 1974-12-17 | Rca Corp | Carrier injected avalanche device |
US3821657A (en) * | 1972-10-25 | 1974-06-28 | Gen Electric | High frequency semiconductor amplifying devices and circuits therefor |
-
1974
- 1974-02-11 US US05/441,675 patent/US3940783A/en not_active Expired - Lifetime
-
1975
- 1975-01-24 GB GB320775A patent/GB1473996A/en not_active Expired
- 1975-02-10 JP JP50017355A patent/JPS50116185A/ja active Pending
- 1975-02-10 NL NL7501553A patent/NL7501553A/nl unknown
- 1975-02-10 CA CA219,664A patent/CA1015462A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1473996A (en) | 1977-05-18 |
JPS50116185A (nl) | 1975-09-11 |
CA1015462A (en) | 1977-08-09 |
US3940783A (en) | 1976-02-24 |
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