NL7500098A - Diffusion of boron into semiconductors - from ceramic glass body acting as source for boron trioxide vapour - Google Patents

Diffusion of boron into semiconductors - from ceramic glass body acting as source for boron trioxide vapour

Info

Publication number
NL7500098A
NL7500098A NL7500098A NL7500098A NL7500098A NL 7500098 A NL7500098 A NL 7500098A NL 7500098 A NL7500098 A NL 7500098A NL 7500098 A NL7500098 A NL 7500098A NL 7500098 A NL7500098 A NL 7500098A
Authority
NL
Netherlands
Prior art keywords
boron
glass body
semiconductor
ceramic glass
source
Prior art date
Application number
NL7500098A
Other languages
Dutch (nl)
Original Assignee
Owens Illinois Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US431212A external-priority patent/US3907618A/en
Priority claimed from US431211A external-priority patent/US3928096A/en
Priority claimed from US05/534,860 external-priority patent/US3962000A/en
Application filed by Owens Illinois Inc filed Critical Owens Illinois Inc
Publication of NL7500098A publication Critical patent/NL7500098A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources

Abstract

Boron is diffused into a semiconductor for use e.g. in transistors, photodiodes, sun-batteries and radiation detectors, by maintaining the semiconductor and a ceramic glass body that acts as source for the vapour phase transport of B2O3 into a vapour phase cpd., and remains stiff and dimensionally stable during the treatment period, at a temp. and for a time sufficient to form a region with p-conductivity in the semiconductor. Provides B2O3 vapour that can be used repeatedly for the controlled and uniform diffusion of boron into a semiconductor. The useful life of the ceramic glass body is very long e.g. more than 800 hrs., as the body has a good resistance to high temps.
NL7500098A 1974-01-07 1975-01-06 Diffusion of boron into semiconductors - from ceramic glass body acting as source for boron trioxide vapour NL7500098A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US431212A US3907618A (en) 1974-01-07 1974-01-07 Process for doping semiconductor employing glass-ceramic dopant
US431211A US3928096A (en) 1974-01-07 1974-01-07 Boron doping of semiconductors
US05/534,860 US3962000A (en) 1974-01-07 1974-12-20 Barium aluminoborosilicate glass-ceramics for semiconductor doping

Publications (1)

Publication Number Publication Date
NL7500098A true NL7500098A (en) 1975-07-09

Family

ID=27411715

Family Applications (2)

Application Number Title Priority Date Filing Date
NL7500098A NL7500098A (en) 1974-01-07 1975-01-06 Diffusion of boron into semiconductors - from ceramic glass body acting as source for boron trioxide vapour
NL8000302A NL8000302A (en) 1974-01-07 1980-01-17 STIMULATING SEMICONDUCTORS WITH BORIUM.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL8000302A NL8000302A (en) 1974-01-07 1980-01-17 STIMULATING SEMICONDUCTORS WITH BORIUM.

Country Status (1)

Country Link
NL (2) NL7500098A (en)

Also Published As

Publication number Publication date
NL8000302A (en) 1980-05-30

Similar Documents

Publication Publication Date Title
ZA753466B (en) Improvements in the heat treatment of materials
ES438931A1 (en) Compositions for treatment of cardiovascular conditions associated with overproduction of catecholamines
ES458710A1 (en) Long acting preparation of cefalexin
GB1507243A (en) 13-l-leucine-14-desamide-motilin a method of preparing it and an agent containing it
NL7500098A (en) Diffusion of boron into semiconductors - from ceramic glass body acting as source for boron trioxide vapour
DK371475A (en) PROCEDURE FOR THE PREPARATION OF HOMOGENICLY DOTED SEMICONDUCTOR MATERIAL WITH P-CONDUCTIVITY
SE7507203L (en) SUBJECT WITH INNUMOLOGICAL EFFECT AND PROCEDURE FOR ITS PREPARATION.
PH13195A (en) Beta methasone-21-adamantane-1'-carboxylate,its chloro analogue,composition and method of use
PH15366A (en) 17-alpha ethynyl,(5-alpha)-2-androsten,17-beta-ol and its beta agetate not mixed with its delta-3-isomers and the therapeutic applications of the compound
KAPLAN Basic theory of the thermionic converter and materials problems in use with a reactor or a combustion chamber as a heat source
JPS51121602A (en) A chemical cleaning method in combination with vaccum suction
JPS54586A (en) Production of semiconductor device
DE3763141D1 (en) PHARMACEUTICAL COMPOSITIONS FOR TREATING CHARCOT SYNDROME.
Jeglitsch et al. Improper Heat-Treatment of Ferrous Materials as the Cause of Defects
SE404487B (en) TOOTH CLEANING COMPOSITION CONTAINING DEXTRANAS IN COMBINATION WITH STABILIZING ACTIVATOR
JPS532061A (en) Flip-flop circuit
DSF et al. Exchange transition amplitudes
JPS51128680A (en) An ion-applied heat treatment furnace
GB1379872A (en) Apparatus for the doping of semiconductor discs
JPS5261971A (en) Control of turn-off time of silicon controlled rectifying element
FR2038787A5 (en) Diffusion of phosphorus into silicon substr- - ates
JPS52154343A (en) Production of semiconductor device
JPS51130046A (en) Device for preventing steaming in a bath unit or the like
JPS5229415A (en) Method of heat treatment for saw teeth
FR2100650A1 (en) Uricosuric, beta phenylsulphinylethyl-n,n'-diphenyl malonomonohydrazi

Legal Events

Date Code Title Description
BC A request for examination has been filed
BN A decision not to publish the application has become irrevocable