NL7415836A - Een-kristallen van beryllium lanthanaat waaraan een "dope" is toegevoegd. - Google Patents
Een-kristallen van beryllium lanthanaat waaraan een "dope" is toegevoegd.Info
- Publication number
- NL7415836A NL7415836A NL7415836A NL7415836A NL7415836A NL 7415836 A NL7415836 A NL 7415836A NL 7415836 A NL7415836 A NL 7415836A NL 7415836 A NL7415836 A NL 7415836A NL 7415836 A NL7415836 A NL 7415836A
- Authority
- NL
- Netherlands
- Prior art keywords
- lanthanate
- dope
- beryllium
- crystals
- added
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1663—Solid materials characterised by a crystal matrix beryllate
- H01S3/1665—La2Be2O5 [BEL]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lasers (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US422450A US3866142A (en) | 1973-12-06 | 1973-12-06 | Doped beryllium lanthanate crystals |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7415836A true NL7415836A (nl) | 1975-06-10 |
NL183481B NL183481B (nl) | 1988-06-01 |
NL183481C NL183481C (nl) | 1988-11-01 |
Family
ID=23674941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7415836,A NL183481C (nl) | 1973-12-06 | 1974-12-04 | Gedoteerd eenkristal van berylliumlanthanaat, alsmede laser die zo'n eenkristal bevat. |
Country Status (9)
Country | Link |
---|---|
US (1) | US3866142A (nl) |
JP (1) | JPS595559B2 (nl) |
CA (1) | CA1039156A (nl) |
CH (1) | CH613876A5 (nl) |
DE (1) | DE2456180C2 (nl) |
FR (1) | FR2253713B1 (nl) |
GB (1) | GB1441698A (nl) |
IT (1) | IT1024994B (nl) |
NL (1) | NL183481C (nl) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE31057E (en) * | 1974-11-29 | 1982-10-12 | Allied Chemical Corporation | Chromium-doped beryllium aluminate lasers |
US3997853A (en) * | 1974-11-29 | 1976-12-14 | Allied Chemical Corporation | Chromium-doped beryllium aluminate lasers |
US4713820A (en) * | 1985-08-02 | 1987-12-15 | Allied Corporation | Thermal lensing-compensated lanthanum beryllate laser |
JPS6321658U (nl) * | 1986-07-28 | 1988-02-13 | ||
US4809283A (en) * | 1988-02-26 | 1989-02-28 | Allied-Signal Inc. | Method of manufacturing chromium-doped beryllium aluminate laser rod and lasers incorporating the rods therein |
US4974230A (en) * | 1988-08-23 | 1990-11-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tm,Ho:YLF laser end-pumped by a semiconductor diode laser array |
US5299210A (en) * | 1992-04-28 | 1994-03-29 | Rutgers University | Four-level multiply doped rare earth laser system |
US5483062A (en) * | 1994-01-21 | 1996-01-09 | Merrill Corporation | Photon detector based upon an activated lanthanide beryllate scintillator |
GB2290150B (en) * | 1994-04-22 | 1998-08-26 | Univ Southampton | Doped optical waveguide amplifier |
FR2732352B1 (fr) * | 1995-03-28 | 1997-06-13 | Rhone Poulenc Chimie | Utilisation comme pigment colorant de composes a base de terbium |
US6491752B1 (en) * | 1999-07-16 | 2002-12-10 | Sumco Oregon Corporation | Enhanced n-type silicon material for epitaxial wafer substrate and method of making same |
JP4605729B2 (ja) * | 2001-01-19 | 2011-01-05 | 信越石英株式会社 | 透光性セラミックス体及びその製造方法 |
JP4587350B2 (ja) * | 2001-01-19 | 2010-11-24 | 信越石英株式会社 | 透光性セラミックス体の製造方法 |
JP6303146B2 (ja) * | 2014-02-19 | 2018-04-04 | 株式会社オキサイド | 単結晶、放射線検出器及び放射線検出器の使用方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USB275677I5 (nl) * | 1963-04-25 |
-
1973
- 1973-12-06 US US422450A patent/US3866142A/en not_active Expired - Lifetime
-
1974
- 1974-11-26 CA CA214,694A patent/CA1039156A/en not_active Expired
- 1974-11-28 DE DE2456180A patent/DE2456180C2/de not_active Expired
- 1974-12-03 GB GB5226174A patent/GB1441698A/en not_active Expired
- 1974-12-04 NL NLAANVRAGE7415836,A patent/NL183481C/nl not_active IP Right Cessation
- 1974-12-05 CH CH1616774A patent/CH613876A5/xx not_active IP Right Cessation
- 1974-12-05 JP JP49138913A patent/JPS595559B2/ja not_active Expired
- 1974-12-06 FR FR7440127A patent/FR2253713B1/fr not_active Expired
- 1974-12-06 IT IT70544/74A patent/IT1024994B/it active
Also Published As
Publication number | Publication date |
---|---|
FR2253713A1 (nl) | 1975-07-04 |
CA1039156A (en) | 1978-09-26 |
FR2253713B1 (nl) | 1981-05-22 |
JPS5090598A (nl) | 1975-07-19 |
US3866142A (en) | 1975-02-11 |
GB1441698A (en) | 1976-07-07 |
DE2456180C2 (de) | 1983-11-24 |
NL183481B (nl) | 1988-06-01 |
DE2456180A1 (de) | 1975-06-12 |
NL183481C (nl) | 1988-11-01 |
IT1024994B (it) | 1978-07-20 |
CH613876A5 (nl) | 1979-10-31 |
JPS595559B2 (ja) | 1984-02-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |