NL7415836A - Een-kristallen van beryllium lanthanaat waaraan een "dope" is toegevoegd. - Google Patents

Een-kristallen van beryllium lanthanaat waaraan een "dope" is toegevoegd.

Info

Publication number
NL7415836A
NL7415836A NL7415836A NL7415836A NL7415836A NL 7415836 A NL7415836 A NL 7415836A NL 7415836 A NL7415836 A NL 7415836A NL 7415836 A NL7415836 A NL 7415836A NL 7415836 A NL7415836 A NL 7415836A
Authority
NL
Netherlands
Prior art keywords
lanthanate
dope
beryllium
crystals
added
Prior art date
Application number
NL7415836A
Other languages
English (en)
Other versions
NL183481B (nl
NL183481C (nl
Original Assignee
Allied Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allied Chem filed Critical Allied Chem
Publication of NL7415836A publication Critical patent/NL7415836A/nl
Publication of NL183481B publication Critical patent/NL183481B/nl
Application granted granted Critical
Publication of NL183481C publication Critical patent/NL183481C/nl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10Solid or liquid components, e.g. Verneuil method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1663Solid materials characterised by a crystal matrix beryllate
    • H01S3/1665La2Be2O5 [BEL]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
NLAANVRAGE7415836,A 1973-12-06 1974-12-04 Gedoteerd eenkristal van berylliumlanthanaat, alsmede laser die zo'n eenkristal bevat. NL183481C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US422450A US3866142A (en) 1973-12-06 1973-12-06 Doped beryllium lanthanate crystals

Publications (3)

Publication Number Publication Date
NL7415836A true NL7415836A (nl) 1975-06-10
NL183481B NL183481B (nl) 1988-06-01
NL183481C NL183481C (nl) 1988-11-01

Family

ID=23674941

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7415836,A NL183481C (nl) 1973-12-06 1974-12-04 Gedoteerd eenkristal van berylliumlanthanaat, alsmede laser die zo'n eenkristal bevat.

Country Status (9)

Country Link
US (1) US3866142A (nl)
JP (1) JPS595559B2 (nl)
CA (1) CA1039156A (nl)
CH (1) CH613876A5 (nl)
DE (1) DE2456180C2 (nl)
FR (1) FR2253713B1 (nl)
GB (1) GB1441698A (nl)
IT (1) IT1024994B (nl)
NL (1) NL183481C (nl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997853A (en) * 1974-11-29 1976-12-14 Allied Chemical Corporation Chromium-doped beryllium aluminate lasers
USRE31057E (en) * 1974-11-29 1982-10-12 Allied Chemical Corporation Chromium-doped beryllium aluminate lasers
US4713820A (en) * 1985-08-02 1987-12-15 Allied Corporation Thermal lensing-compensated lanthanum beryllate laser
JPS6321658U (nl) * 1986-07-28 1988-02-13
US4809283A (en) * 1988-02-26 1989-02-28 Allied-Signal Inc. Method of manufacturing chromium-doped beryllium aluminate laser rod and lasers incorporating the rods therein
US4974230A (en) * 1988-08-23 1990-11-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tm,Ho:YLF laser end-pumped by a semiconductor diode laser array
US5299210A (en) * 1992-04-28 1994-03-29 Rutgers University Four-level multiply doped rare earth laser system
US5483062A (en) * 1994-01-21 1996-01-09 Merrill Corporation Photon detector based upon an activated lanthanide beryllate scintillator
GB2290150B (en) * 1994-04-22 1998-08-26 Univ Southampton Doped optical waveguide amplifier
FR2732352B1 (fr) * 1995-03-28 1997-06-13 Rhone Poulenc Chimie Utilisation comme pigment colorant de composes a base de terbium
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
JP4587350B2 (ja) * 2001-01-19 2010-11-24 信越石英株式会社 透光性セラミックス体の製造方法
JP4605729B2 (ja) * 2001-01-19 2011-01-05 信越石英株式会社 透光性セラミックス体及びその製造方法
JP6303146B2 (ja) * 2014-02-19 2018-04-04 株式会社オキサイド 単結晶、放射線検出器及び放射線検出器の使用方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB275677I5 (nl) * 1963-04-25

Also Published As

Publication number Publication date
NL183481B (nl) 1988-06-01
CH613876A5 (nl) 1979-10-31
FR2253713A1 (nl) 1975-07-04
DE2456180A1 (de) 1975-06-12
NL183481C (nl) 1988-11-01
CA1039156A (en) 1978-09-26
JPS595559B2 (ja) 1984-02-06
DE2456180C2 (de) 1983-11-24
GB1441698A (en) 1976-07-07
US3866142A (en) 1975-02-11
IT1024994B (it) 1978-07-20
FR2253713B1 (nl) 1981-05-22
JPS5090598A (nl) 1975-07-19

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee