NL7408110A - Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.

Info

Publication number
NL7408110A
NL7408110A NL7408110A NL7408110A NL7408110A NL 7408110 A NL7408110 A NL 7408110A NL 7408110 A NL7408110 A NL 7408110A NL 7408110 A NL7408110 A NL 7408110A NL 7408110 A NL7408110 A NL 7408110A
Authority
NL
Netherlands
Prior art keywords
manufacture
semiconductor device
transistor structures
complementary transistor
complementary
Prior art date
Application number
NL7408110A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7408110A priority Critical patent/NL7408110A/xx
Priority to GB21807/75A priority patent/GB1505103A/en
Priority to DE19752525529 priority patent/DE2525529B2/de
Priority to CA229,060A priority patent/CA1029134A/en
Priority to CH771075A priority patent/CH588166A5/xx
Priority to IT24362/75A priority patent/IT1046053B/it
Priority to ES438593A priority patent/ES438593A1/es
Priority to BR4859/75A priority patent/BR7503777A/pt
Priority to BE157368A priority patent/BE830286A/xx
Priority to JP50072123A priority patent/JPS5112778A/ja
Priority to SE7506878A priority patent/SE407996B/xx
Priority to AU82149/75A priority patent/AU499052B2/en
Priority to FR7519105A priority patent/FR2275884A1/fr
Publication of NL7408110A publication Critical patent/NL7408110A/xx
Priority to US05/876,908 priority patent/US4146905A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
NL7408110A 1974-06-18 1974-06-18 Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan. NL7408110A (nl)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NL7408110A NL7408110A (nl) 1974-06-18 1974-06-18 Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.
GB21807/75A GB1505103A (en) 1974-06-18 1975-05-21 Semiconductor device having complementary transistors and method of manufacturing same
DE19752525529 DE2525529B2 (de) 1974-06-18 1975-06-07 Halbleiteranordnung mit komplementaeren transistorstrukturen und verfahren zu ihrer herstellung
CA229,060A CA1029134A (en) 1974-06-18 1975-06-11 Semiconductor device having complementary transistor structures and method of manufacturing same
CH771075A CH588166A5 (OSRAM) 1974-06-18 1975-06-13
IT24362/75A IT1046053B (it) 1974-06-18 1975-06-13 Dispositivo semiconduttore presentante strutture a transistori di tipo complementare e metodo di fabbricazione dello stesso
BR4859/75A BR7503777A (pt) 1974-06-18 1975-06-16 Dispositivo semicondutor e processo de fabricacao do mesm
ES438593A ES438593A1 (es) 1974-06-18 1975-06-16 Perfeccionamientos introducidos en un dispositivo semicon- ductor.
BE157368A BE830286A (fr) 1974-06-18 1975-06-16 Dispositif semi-conducteur avec des structures de transistor complementaires, et procede pour la fabrication de ce dispositif
JP50072123A JPS5112778A (en) 1974-06-18 1975-06-16 Handotaisochi oyobi sonoseizohoho
SE7506878A SE407996B (sv) 1974-06-18 1975-06-16 Halvledaranordning med komplementera transistorer och sett att framstella densamma
AU82149/75A AU499052B2 (en) 1974-06-18 1975-06-17 Complementary transistor structure
FR7519105A FR2275884A1 (fr) 1974-06-18 1975-06-18 Dispositif semi-conducteur avec des structures de transistor complementaires et procede pour la fabrication de ce dispositif
US05/876,908 US4146905A (en) 1974-06-18 1978-02-13 Semiconductor device having complementary transistor structures and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7408110A NL7408110A (nl) 1974-06-18 1974-06-18 Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
NL7408110A true NL7408110A (nl) 1975-12-22

Family

ID=19821569

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7408110A NL7408110A (nl) 1974-06-18 1974-06-18 Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.

Country Status (13)

Country Link
JP (1) JPS5112778A (OSRAM)
AU (1) AU499052B2 (OSRAM)
BE (1) BE830286A (OSRAM)
BR (1) BR7503777A (OSRAM)
CA (1) CA1029134A (OSRAM)
CH (1) CH588166A5 (OSRAM)
DE (1) DE2525529B2 (OSRAM)
ES (1) ES438593A1 (OSRAM)
FR (1) FR2275884A1 (OSRAM)
GB (1) GB1505103A (OSRAM)
IT (1) IT1046053B (OSRAM)
NL (1) NL7408110A (OSRAM)
SE (1) SE407996B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1980001335A1 (en) * 1978-12-20 1980-06-26 Western Electric Co Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
GB2060252B (en) * 1979-09-17 1984-02-22 Nippon Telegraph & Telephone Mutually isolated complementary semiconductor elements
JPS57204898A (en) * 1981-06-02 1982-12-15 Saito Masayasu Pump for vessel for dividing liquid little by little
JP2531824Y2 (ja) * 1987-02-13 1997-04-09 株式会社 神崎高級工機製作所 油圧クラツチ式変速装置
JPS63142451U (OSRAM) * 1987-03-12 1988-09-20
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
US7076124B2 (en) * 2002-12-20 2006-07-11 Avago Technologies, Ltd. Integrated multichannel laser driver and photodetector receiver
EP4372792A1 (en) * 2022-11-16 2024-05-22 Infineon Technologies Dresden GmbH & Co . KG Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1980001335A1 (en) * 1978-12-20 1980-06-26 Western Electric Co Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Also Published As

Publication number Publication date
AU499052B2 (en) 1979-04-05
BE830286A (fr) 1975-12-16
ES438593A1 (es) 1977-01-16
AU8214975A (en) 1976-12-23
IT1046053B (it) 1980-06-30
FR2275884B1 (OSRAM) 1980-10-24
GB1505103A (en) 1978-03-22
SE7506878L (sv) 1975-12-19
SE407996B (sv) 1979-04-30
DE2525529A1 (de) 1976-01-08
DE2525529B2 (de) 1977-08-04
JPS5247319B2 (OSRAM) 1977-12-01
FR2275884A1 (fr) 1976-01-16
JPS5112778A (en) 1976-01-31
CH588166A5 (OSRAM) 1977-05-31
CA1029134A (en) 1978-04-04
BR7503777A (pt) 1976-07-06

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Legal Events

Date Code Title Description
BC A request for examination has been filed
BI The patent application has been withdrawn