NL7406749A - - Google Patents

Info

Publication number
NL7406749A
NL7406749A NL7406749A NL7406749A NL7406749A NL 7406749 A NL7406749 A NL 7406749A NL 7406749 A NL7406749 A NL 7406749A NL 7406749 A NL7406749 A NL 7406749A NL 7406749 A NL7406749 A NL 7406749A
Authority
NL
Netherlands
Application number
NL7406749A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7406749A publication Critical patent/NL7406749A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/10DRAM devices comprising bipolar components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • H10W15/01Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL7406749A 1973-05-21 1974-05-20 NL7406749A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36249573A 1973-05-21 1973-05-21

Publications (1)

Publication Number Publication Date
NL7406749A true NL7406749A (https=) 1974-11-25

Family

ID=23426344

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7406749A NL7406749A (https=) 1973-05-21 1974-05-20

Country Status (7)

Country Link
JP (1) JPS5021684A (https=)
CA (1) CA1030263A (https=)
DE (1) DE2424607A1 (https=)
FR (1) FR2231074A1 (https=)
GB (1) GB1446386A (https=)
IT (1) IT1012682B (https=)
NL (1) NL7406749A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210904A (en) * 1976-05-26 1977-01-27 Nippon Kokuen Kogyo Kk Plunger
JPS53111406U (https=) * 1977-02-14 1978-09-06
JPS5424627A (en) * 1977-07-27 1979-02-24 Mitsubishi Gas Chemical Co Removinggagent for phtoresist
GB2006523B (en) * 1977-10-13 1982-12-01 Mohsen A M Dynamic ram memory and vertical charge coupled dynamic storage cell therefor
JPS55130079U (https=) * 1979-03-09 1980-09-13

Also Published As

Publication number Publication date
GB1446386A (en) 1976-08-18
FR2231074A1 (https=) 1974-12-20
IT1012682B (it) 1977-03-10
DE2424607A1 (de) 1974-12-12
JPS5021684A (https=) 1975-03-07
CA1030263A (en) 1978-04-25

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