NL7406749A - - Google Patents

Info

Publication number
NL7406749A
NL7406749A NL7406749A NL7406749A NL7406749A NL 7406749 A NL7406749 A NL 7406749A NL 7406749 A NL7406749 A NL 7406749A NL 7406749 A NL7406749 A NL 7406749A NL 7406749 A NL7406749 A NL 7406749A
Authority
NL
Netherlands
Application number
NL7406749A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7406749A publication Critical patent/NL7406749A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
NL7406749A 1973-05-21 1974-05-20 NL7406749A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36249573A 1973-05-21 1973-05-21

Publications (1)

Publication Number Publication Date
NL7406749A true NL7406749A (enExample) 1974-11-25

Family

ID=23426344

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7406749A NL7406749A (enExample) 1973-05-21 1974-05-20

Country Status (7)

Country Link
JP (1) JPS5021684A (enExample)
CA (1) CA1030263A (enExample)
DE (1) DE2424607A1 (enExample)
FR (1) FR2231074A1 (enExample)
GB (1) GB1446386A (enExample)
IT (1) IT1012682B (enExample)
NL (1) NL7406749A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210904A (en) * 1976-05-26 1977-01-27 Nippon Kokuen Kogyo Kk Plunger
JPS53111406U (enExample) * 1977-02-14 1978-09-06
JPS5424627A (en) * 1977-07-27 1979-02-24 Mitsubishi Gas Chemical Co Removinggagent for phtoresist
GB2095901B (en) * 1977-10-13 1983-02-23 Mohsen Amr Mohamed An mos transistor
JPS55130079U (enExample) * 1979-03-09 1980-09-13

Also Published As

Publication number Publication date
DE2424607A1 (de) 1974-12-12
JPS5021684A (enExample) 1975-03-07
IT1012682B (it) 1977-03-10
FR2231074A1 (enExample) 1974-12-20
GB1446386A (en) 1976-08-18
CA1030263A (en) 1978-04-25

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