NL7403523A - - Google Patents

Info

Publication number
NL7403523A
NL7403523A NL7403523A NL7403523A NL7403523A NL 7403523 A NL7403523 A NL 7403523A NL 7403523 A NL7403523 A NL 7403523A NL 7403523 A NL7403523 A NL 7403523A NL 7403523 A NL7403523 A NL 7403523A
Authority
NL
Netherlands
Application number
NL7403523A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7403523A publication Critical patent/NL7403523A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
NL7403523A 1973-03-16 1974-03-15 NL7403523A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/342,173 US4051505A (en) 1973-03-16 1973-03-16 Two-dimensional transfer in charge transfer device

Publications (1)

Publication Number Publication Date
NL7403523A true NL7403523A (fr) 1974-09-18

Family

ID=23340682

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7403523A NL7403523A (fr) 1973-03-16 1974-03-15

Country Status (10)

Country Link
US (1) US4051505A (fr)
JP (1) JPS49123285A (fr)
BE (1) BE812370A (fr)
CA (1) CA1003962A (fr)
DE (1) DE2412465A1 (fr)
FR (1) FR2221819B1 (fr)
GB (1) GB1433723A (fr)
IT (1) IT1003792B (fr)
NL (1) NL7403523A (fr)
SE (1) SE398791B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125786A (en) * 1977-08-19 1978-11-14 General Electric Company Charge transfer memory apparatus
JPS5456967A (en) * 1977-10-15 1979-05-08 Kobe Steel Ltd Indirect extrusion method
US4237389A (en) * 1978-09-01 1980-12-02 Trw Inc. Charge coupled device channel crossover circuit
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers
JPH01503187A (ja) * 1987-05-05 1989-10-26 ヒューズ・エアクラフト・カンパニー 集束イオンビーム構成を伴う電荷結合装置
US4967250A (en) * 1987-05-05 1990-10-30 Hughes Aircraft Company Charge-coupled device with focused ion beam fabrication
DE3715675A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiterelement
US5760431A (en) * 1995-11-29 1998-06-02 Massachusetts Institute Of Technology Multidirectional transfer charge-coupled device
US10373962B2 (en) 2017-05-26 2019-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including trimmed-gates and method for generating layout of same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1019442A (en) * 1971-01-14 1977-10-18 Rca Corporation Charge coupled random access memory using semiconductor bit line
US3720922A (en) * 1971-03-17 1973-03-13 Rca Corp Charge coupled memory
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel

Also Published As

Publication number Publication date
BE812370A (fr) 1974-07-01
CA1003962A (en) 1977-01-18
GB1433723A (en) 1976-04-28
SE398791B (sv) 1978-01-16
IT1003792B (it) 1976-06-10
US4051505A (en) 1977-09-27
JPS49123285A (fr) 1974-11-26
FR2221819A1 (fr) 1974-10-11
DE2412465A1 (de) 1974-09-26
FR2221819B1 (fr) 1978-01-06

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