FR2221819A1 - - Google Patents

Info

Publication number
FR2221819A1
FR2221819A1 FR7408899A FR7408899A FR2221819A1 FR 2221819 A1 FR2221819 A1 FR 2221819A1 FR 7408899 A FR7408899 A FR 7408899A FR 7408899 A FR7408899 A FR 7408899A FR 2221819 A1 FR2221819 A1 FR 2221819A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7408899A
Other versions
FR2221819B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2221819A1 publication Critical patent/FR2221819A1/fr
Application granted granted Critical
Publication of FR2221819B1 publication Critical patent/FR2221819B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
FR7408899A 1973-03-16 1974-03-15 Expired FR2221819B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/342,173 US4051505A (en) 1973-03-16 1973-03-16 Two-dimensional transfer in charge transfer device

Publications (2)

Publication Number Publication Date
FR2221819A1 true FR2221819A1 (fr) 1974-10-11
FR2221819B1 FR2221819B1 (fr) 1978-01-06

Family

ID=23340682

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7408899A Expired FR2221819B1 (fr) 1973-03-16 1974-03-15

Country Status (10)

Country Link
US (1) US4051505A (fr)
JP (1) JPS49123285A (fr)
BE (1) BE812370A (fr)
CA (1) CA1003962A (fr)
DE (1) DE2412465A1 (fr)
FR (1) FR2221819B1 (fr)
GB (1) GB1433723A (fr)
IT (1) IT1003792B (fr)
NL (1) NL7403523A (fr)
SE (1) SE398791B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125786A (en) * 1977-08-19 1978-11-14 General Electric Company Charge transfer memory apparatus
JPS5456967A (en) * 1977-10-15 1979-05-08 Kobe Steel Ltd Indirect extrusion method
US4237389A (en) * 1978-09-01 1980-12-02 Trw Inc. Charge coupled device channel crossover circuit
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers
KR910009338B1 (ko) * 1987-05-05 1991-11-11 휴우즈 에어크라프트 캄파니 집속된 이온 비임을 발생시키는 전하결합 장치 및 이의 제조방법
US4967250A (en) * 1987-05-05 1990-10-30 Hughes Aircraft Company Charge-coupled device with focused ion beam fabrication
DE3715675A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiterelement
US5760431A (en) * 1995-11-29 1998-06-02 Massachusetts Institute Of Technology Multidirectional transfer charge-coupled device
US10373962B2 (en) 2017-05-26 2019-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including trimmed-gates and method for generating layout of same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1019442A (en) * 1971-01-14 1977-10-18 Rca Corporation Charge coupled random access memory using semiconductor bit line
US3720922A (en) * 1971-03-17 1973-03-13 Rca Corp Charge coupled memory
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
US4051505A (en) 1977-09-27
GB1433723A (en) 1976-04-28
JPS49123285A (fr) 1974-11-26
CA1003962A (en) 1977-01-18
FR2221819B1 (fr) 1978-01-06
SE398791B (sv) 1978-01-16
NL7403523A (fr) 1974-09-18
DE2412465A1 (de) 1974-09-26
BE812370A (fr) 1974-07-01
IT1003792B (it) 1976-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse