NL7305505A - - Google Patents

Info

Publication number
NL7305505A
NL7305505A NL7305505A NL7305505A NL7305505A NL 7305505 A NL7305505 A NL 7305505A NL 7305505 A NL7305505 A NL 7305505A NL 7305505 A NL7305505 A NL 7305505A NL 7305505 A NL7305505 A NL 7305505A
Authority
NL
Netherlands
Application number
NL7305505A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7305505A publication Critical patent/NL7305505A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
NL7305505A 1972-04-20 1973-04-18 NL7305505A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3976572A JPS533233B2 (enExample) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
NL7305505A true NL7305505A (enExample) 1973-10-23

Family

ID=12562021

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7305505A NL7305505A (enExample) 1972-04-20 1973-04-18

Country Status (6)

Country Link
JP (1) JPS533233B2 (enExample)
CA (1) CA982700A (enExample)
DE (1) DE2320412C3 (enExample)
FR (1) FR2181076B1 (enExample)
GB (1) GB1425956A (enExample)
NL (1) NL7305505A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557026B2 (enExample) * 1974-05-15 1980-02-21
JPS60220971A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1413219A (fr) * 1963-09-03 1965-10-08 Gen Electric Perfectionnement aux semiconducteurs de commutation

Also Published As

Publication number Publication date
DE2320412A1 (de) 1973-10-25
DE2320412C3 (de) 1979-09-06
JPS493584A (enExample) 1974-01-12
GB1425956A (en) 1976-02-25
DE2320412B2 (de) 1979-01-11
CA982700A (en) 1976-01-27
JPS533233B2 (enExample) 1978-02-04
FR2181076B1 (enExample) 1977-08-19
FR2181076A1 (enExample) 1973-11-30

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Legal Events

Date Code Title Description
BV The patent application has lapsed