NL7305505A - - Google Patents

Info

Publication number
NL7305505A
NL7305505A NL7305505A NL7305505A NL7305505A NL 7305505 A NL7305505 A NL 7305505A NL 7305505 A NL7305505 A NL 7305505A NL 7305505 A NL7305505 A NL 7305505A NL 7305505 A NL7305505 A NL 7305505A
Authority
NL
Netherlands
Application number
NL7305505A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7305505A publication Critical patent/NL7305505A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
NL7305505A 1972-04-20 1973-04-18 NL7305505A (enrdf_load_html_response)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3976572A JPS533233B2 (enrdf_load_html_response) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
NL7305505A true NL7305505A (enrdf_load_html_response) 1973-10-23

Family

ID=12562021

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7305505A NL7305505A (enrdf_load_html_response) 1972-04-20 1973-04-18

Country Status (6)

Country Link
JP (1) JPS533233B2 (enrdf_load_html_response)
CA (1) CA982700A (enrdf_load_html_response)
DE (1) DE2320412C3 (enrdf_load_html_response)
FR (1) FR2181076B1 (enrdf_load_html_response)
GB (1) GB1425956A (enrdf_load_html_response)
NL (1) NL7305505A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557026B2 (enrdf_load_html_response) * 1974-05-15 1980-02-21
JPS60220971A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1413219A (fr) * 1963-09-03 1965-10-08 Gen Electric Perfectionnement aux semiconducteurs de commutation

Also Published As

Publication number Publication date
DE2320412B2 (de) 1979-01-11
DE2320412A1 (de) 1973-10-25
FR2181076A1 (enrdf_load_html_response) 1973-11-30
JPS493584A (enrdf_load_html_response) 1974-01-12
JPS533233B2 (enrdf_load_html_response) 1978-02-04
GB1425956A (en) 1976-02-25
CA982700A (en) 1976-01-27
DE2320412C3 (de) 1979-09-06
FR2181076B1 (enrdf_load_html_response) 1977-08-19

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Legal Events

Date Code Title Description
BV The patent application has lapsed