NL7209822A - - Google Patents

Info

Publication number
NL7209822A
NL7209822A NL7209822A NL7209822A NL7209822A NL 7209822 A NL7209822 A NL 7209822A NL 7209822 A NL7209822 A NL 7209822A NL 7209822 A NL7209822 A NL 7209822A NL 7209822 A NL7209822 A NL 7209822A
Authority
NL
Netherlands
Application number
NL7209822A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7209822A publication Critical patent/NL7209822A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL7209822A 1971-07-17 1972-07-14 NL7209822A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6328171 1971-07-17

Publications (1)

Publication Number Publication Date
NL7209822A true NL7209822A (fr) 1973-01-19

Family

ID=13224766

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7209822A NL7209822A (fr) 1971-07-17 1972-07-14

Country Status (7)

Country Link
US (1) US3806773A (fr)
CA (1) CA967683A (fr)
DE (1) DE2234973B2 (fr)
FR (1) FR2146323B1 (fr)
GB (1) GB1400541A (fr)
IT (1) IT962927B (fr)
NL (1) NL7209822A (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024084A (fr) * 1973-07-05 1975-03-14
US3879640A (en) * 1974-02-11 1975-04-22 Rca Corp Protective diode network for MOS devices
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
JPS55136726A (en) * 1979-04-11 1980-10-24 Nec Corp High voltage mos inverter and its drive method
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS5836169A (ja) * 1981-08-28 1983-03-03 Fuji Electric Co Ltd サイリスタ監視装置
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
US5212398A (en) * 1989-11-30 1993-05-18 Kabushiki Kaisha Toshiba BiMOS structure having a protective diode
EP0646964B1 (fr) * 1993-09-30 1999-12-15 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Verrouillage actif, en structure intégrée pour la protection de dispostifs de puissance contre des surtensions, et procédé de fabrication associé
EP0657933B1 (fr) * 1993-12-13 2000-06-28 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Verrouillage actif en structure intégrée pour la protection de dispositifs de puissance semiconducteurs contre des surtensions
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US6949802B2 (en) * 2003-11-20 2005-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection structure
JP2006294719A (ja) * 2005-04-07 2006-10-26 Oki Electric Ind Co Ltd 半導体装置
US8476709B2 (en) * 2006-08-24 2013-07-02 Infineon Technologies Ag ESD protection device and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

Also Published As

Publication number Publication date
DE2234973A1 (de) 1973-02-01
US3806773A (en) 1974-04-23
DE2234973B2 (de) 1974-10-03
CA967683A (en) 1975-05-13
FR2146323B1 (fr) 1975-03-07
IT962927B (it) 1973-12-31
GB1400541A (en) 1975-07-16
FR2146323A1 (fr) 1973-03-02

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Legal Events

Date Code Title Description
BV The patent application has lapsed