NL7206877A - - Google Patents

Info

Publication number
NL7206877A
NL7206877A NL7206877A NL7206877A NL7206877A NL 7206877 A NL7206877 A NL 7206877A NL 7206877 A NL7206877 A NL 7206877A NL 7206877 A NL7206877 A NL 7206877A NL 7206877 A NL7206877 A NL 7206877A
Authority
NL
Netherlands
Application number
NL7206877A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7206877A priority Critical patent/NL7206877A/xx
Priority to DE19732324127 priority patent/DE2324127A1/en
Priority to CA171,410A priority patent/CA990626A/en
Priority to FR7317471A priority patent/FR2185445B1/fr
Priority to JP5420073A priority patent/JPS5225295B2/ja
Priority to GB2355473A priority patent/GB1406760A/en
Priority to IT6843873A priority patent/IT985922B/en
Publication of NL7206877A publication Critical patent/NL7206877A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
NL7206877A 1972-05-20 1972-05-20 NL7206877A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (en) 1972-05-20 1972-05-20
DE19732324127 DE2324127A1 (en) 1972-05-20 1973-05-12 METHOD OF DEPOSITING ELEMENTARY SEMICONDUCTOR MATERIAL
CA171,410A CA990626A (en) 1972-05-20 1973-05-15 Method of depositing elementary semiconductor material
FR7317471A FR2185445B1 (en) 1972-05-20 1973-05-15
JP5420073A JPS5225295B2 (en) 1972-05-20 1973-05-17
GB2355473A GB1406760A (en) 1972-05-20 1973-05-17 Depositing semiconductor material
IT6843873A IT985922B (en) 1972-05-20 1973-05-17 PROCEDURE FOR THE DEPOSITION OF SEMICONDUCTIVE MATERIALS IN THE ELEMENTARY STATE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (en) 1972-05-20 1972-05-20

Publications (1)

Publication Number Publication Date
NL7206877A true NL7206877A (en) 1973-11-22

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7206877A NL7206877A (en) 1972-05-20 1972-05-20

Country Status (7)

Country Link
JP (1) JPS5225295B2 (en)
CA (1) CA990626A (en)
DE (1) DE2324127A1 (en)
FR (1) FR2185445B1 (en)
GB (1) GB1406760A (en)
IT (1) IT985922B (en)
NL (1) NL7206877A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600B1 (en) * 1980-07-28 1984-10-10 Monsanto Company Improved method for producing semiconductor grade silicon
JPS6169116A (en) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd Susceptor for continuous cvd coating on silicon wafer
JP3725598B2 (en) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 Epitaxial wafer manufacturing method
JP2006070342A (en) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd Vapor phase film deposition system, susceptor and vapor phase film deposition method
JP6333646B2 (en) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングBASF Coatings GmbH Two-component coating composition and method for forming multilayer coating film using the same

Also Published As

Publication number Publication date
JPS5225295B2 (en) 1977-07-06
FR2185445A1 (en) 1974-01-04
DE2324127A1 (en) 1973-12-06
CA990626A (en) 1976-06-08
GB1406760A (en) 1975-09-17
IT985922B (en) 1974-12-30
JPS4943572A (en) 1974-04-24
FR2185445B1 (en) 1976-06-11

Similar Documents

Publication Publication Date Title
JPS5126192Y2 (en)
FR2185445B1 (en)
JPS4945566U (en)
JPS5025900Y2 (en)
JPS511557Y2 (en)
SU406620A2 (en)
JPS5115625B2 (en)
JPS4916225U (en)
JPS4946748A (en)
JPS49102125U (en)
CH569109A5 (en)
CH576407A5 (en)
CH574390A5 (en)
CH574098A5 (en)
CH573908A5 (en)
CH579532A5 (en)
CH572822A5 (en)
CH572173A5 (en)
CH570821A5 (en)
CH570354A5 (en)
CH570181A5 (en)
CH575636A5 (en)
SE374835B (en)
CH568724A5 (en)
CH568695A5 (en)