FR2185445A1 - - Google Patents

Info

Publication number
FR2185445A1
FR2185445A1 FR7317471A FR7317471A FR2185445A1 FR 2185445 A1 FR2185445 A1 FR 2185445A1 FR 7317471 A FR7317471 A FR 7317471A FR 7317471 A FR7317471 A FR 7317471A FR 2185445 A1 FR2185445 A1 FR 2185445A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7317471A
Other languages
French (fr)
Other versions
FR2185445B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2185445A1 publication Critical patent/FR2185445A1/fr
Application granted granted Critical
Publication of FR2185445B1 publication Critical patent/FR2185445B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
FR7317471A 1972-05-20 1973-05-15 Expired FR2185445B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (en) 1972-05-20 1972-05-20

Publications (2)

Publication Number Publication Date
FR2185445A1 true FR2185445A1 (en) 1974-01-04
FR2185445B1 FR2185445B1 (en) 1976-06-11

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7317471A Expired FR2185445B1 (en) 1972-05-20 1973-05-15

Country Status (7)

Country Link
JP (1) JPS5225295B2 (en)
CA (1) CA990626A (en)
DE (1) DE2324127A1 (en)
FR (1) FR2185445B1 (en)
GB (1) GB1406760A (en)
IT (1) IT985922B (en)
NL (1) NL7206877A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
EP0784106A1 (en) * 1996-01-12 1997-07-16 Toshiba Ceramics Co., Ltd. Epitaxial growth method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169116A (en) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd Susceptor for continuous cvd coating on silicon wafer
JP2006070342A (en) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd Vapor phase film deposition system, susceptor and vapor phase film deposition method
JP6333646B2 (en) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ Two-component coating composition and method for forming multilayer coating film using the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
EP0784106A1 (en) * 1996-01-12 1997-07-16 Toshiba Ceramics Co., Ltd. Epitaxial growth method
US5904769A (en) * 1996-01-12 1999-05-18 Toshiba Ceramics Co., Ltd. Epitaxial growth method

Also Published As

Publication number Publication date
IT985922B (en) 1974-12-30
NL7206877A (en) 1973-11-22
JPS4943572A (en) 1974-04-24
DE2324127A1 (en) 1973-12-06
GB1406760A (en) 1975-09-17
FR2185445B1 (en) 1976-06-11
CA990626A (en) 1976-06-08
JPS5225295B2 (en) 1977-07-06

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Legal Events

Date Code Title Description
ST Notification of lapse