NL7202035A - - Google Patents

Info

Publication number
NL7202035A
NL7202035A NL7202035A NL7202035A NL7202035A NL 7202035 A NL7202035 A NL 7202035A NL 7202035 A NL7202035 A NL 7202035A NL 7202035 A NL7202035 A NL 7202035A NL 7202035 A NL7202035 A NL 7202035A
Authority
NL
Netherlands
Application number
NL7202035A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7202035A publication Critical patent/NL7202035A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Chemical Vapour Deposition (AREA)
NL7202035A 1971-03-08 1972-02-16 NL7202035A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2110987A DE2110987B2 (de) 1971-03-08 1971-03-08 Verfahren zum Herstellen von dünnen Schichten aus Tantal

Publications (1)

Publication Number Publication Date
NL7202035A true NL7202035A (en:Method) 1972-09-12

Family

ID=5800841

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7202035A NL7202035A (en:Method) 1971-03-08 1972-02-16

Country Status (7)

Country Link
US (1) US3808109A (en:Method)
BE (1) BE780373A (en:Method)
DE (1) DE2110987B2 (en:Method)
FR (1) FR2128643B1 (en:Method)
GB (1) GB1349833A (en:Method)
IT (1) IT949790B (en:Method)
NL (1) NL7202035A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046712A (en) * 1972-11-30 1977-09-06 United Kingdom Atomic Energy Authority Catalysts sputtered on substantially nonporous low surface area particulate supports
US3874922A (en) * 1973-08-16 1975-04-01 Boeing Co Tantalum thin film resistors by reactive evaporation
US4036708A (en) * 1976-05-13 1977-07-19 Bell Telephone Laboratories, Incorporated Technique for nucleating b.c.c. tantalum films on insulating substrates
JPS5671821A (en) 1979-11-14 1981-06-15 Hitachi Ltd Substrate for magnetic disc and its manufacture
EP0582387B1 (en) * 1992-08-05 1999-05-26 Sharp Kabushiki Kaisha Metallic wiring board and method for producing the same
EP2423158A1 (en) * 2004-03-24 2012-02-29 H. C. Starck Inc Methods of forming alpha and beta tantalum films with controlled and new microstructures
DE112006004000A5 (de) * 2006-06-16 2009-05-20 Siemens Aktiengesellschaft Thermisch beanspruchbares Bauteil mit einer Korrosionsschihct und Verfahren zu dessen Herstellung
CN113235060B (zh) * 2021-05-12 2023-01-06 中国兵器工业第五九研究所 一种全α相钽涂层的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1665571B1 (de) * 1966-03-08 1971-09-09 Siemens Ag Verfahren zur herstellung von duennschichtbaugruppen der elektronik

Also Published As

Publication number Publication date
IT949790B (it) 1973-06-11
US3808109A (en) 1974-04-30
GB1349833A (en) 1974-04-10
BE780373A (fr) 1972-07-03
DE2110987B2 (de) 1978-11-16
DE2110987A1 (de) 1972-09-14
FR2128643B1 (en:Method) 1977-04-01
FR2128643A1 (en:Method) 1972-10-20

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Legal Events

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BV The patent application has lapsed