NL7112900A - - Google Patents
Info
- Publication number
- NL7112900A NL7112900A NL7112900A NL7112900A NL7112900A NL 7112900 A NL7112900 A NL 7112900A NL 7112900 A NL7112900 A NL 7112900A NL 7112900 A NL7112900 A NL 7112900A NL 7112900 A NL7112900 A NL 7112900A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702046929 DE2046929C3 (de) | 1970-09-23 | Schaltungsanordnung zum Lesen und Schreiben bei einem bipolaren Halbleiterspeicher |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7112900A true NL7112900A (ja) | 1972-03-27 |
Family
ID=5783207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7112900A NL7112900A (ja) | 1970-09-23 | 1971-09-20 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3729721A (ja) |
| BE (1) | BE772985A (ja) |
| FR (1) | FR2107888B1 (ja) |
| GB (1) | GB1302313A (ja) |
| LU (1) | LU63935A1 (ja) |
| NL (1) | NL7112900A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034189B2 (ja) * | 1980-04-08 | 1985-08-07 | 富士通株式会社 | 半導体記憶装置 |
| DE3033174C2 (de) * | 1980-09-03 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Leseverstärker für einen Bipolar-Speicherbaustein |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436738A (en) * | 1966-06-28 | 1969-04-01 | Texas Instruments Inc | Plural emitter type active element memory |
| US3537078A (en) * | 1968-07-11 | 1970-10-27 | Ibm | Memory cell with a non-linear collector load |
| US3553659A (en) * | 1968-12-11 | 1971-01-05 | Sperry Rand Corp | Biemitter transistor search memory array |
| US3618052A (en) * | 1969-12-05 | 1971-11-02 | Cogar Corp | Bistable memory with predetermined turn-on state |
| US3634833A (en) * | 1970-03-12 | 1972-01-11 | Texas Instruments Inc | Associative memory circuit |
| US3636377A (en) * | 1970-07-21 | 1972-01-18 | Semi Conductor Electronic Memo | Bipolar semiconductor random access memory |
-
1971
- 1971-08-18 US US00172821A patent/US3729721A/en not_active Expired - Lifetime
- 1971-08-24 GB GB3973171A patent/GB1302313A/en not_active Expired
- 1971-09-20 FR FR7133670A patent/FR2107888B1/fr not_active Expired
- 1971-09-20 NL NL7112900A patent/NL7112900A/xx unknown
- 1971-09-21 LU LU63935D patent/LU63935A1/xx unknown
- 1971-09-23 BE BE772985A patent/BE772985A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2046929A1 (de) | 1972-03-30 |
| US3729721A (en) | 1973-04-24 |
| GB1302313A (ja) | 1973-01-10 |
| LU63935A1 (ja) | 1972-06-27 |
| FR2107888A1 (ja) | 1972-05-12 |
| BE772985A (fr) | 1972-03-23 |
| FR2107888B1 (ja) | 1976-10-29 |
| DE2046929B2 (ja) | 1975-12-04 |