NL7111446A - - Google Patents

Info

Publication number
NL7111446A
NL7111446A NL7111446A NL7111446A NL7111446A NL 7111446 A NL7111446 A NL 7111446A NL 7111446 A NL7111446 A NL 7111446A NL 7111446 A NL7111446 A NL 7111446A NL 7111446 A NL7111446 A NL 7111446A
Authority
NL
Netherlands
Application number
NL7111446A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7111446A publication Critical patent/NL7111446A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6257—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several inputs only combined with selecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
NL7111446A 1970-08-19 1971-08-19 NL7111446A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6522670A 1970-08-19 1970-08-19

Publications (1)

Publication Number Publication Date
NL7111446A true NL7111446A (xx) 1972-02-22

Family

ID=22061201

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7111446A NL7111446A (xx) 1970-08-19 1971-08-19

Country Status (3)

Country Link
US (1) US3736572A (xx)
DE (1) DE2141224A1 (xx)
NL (1) NL7111446A (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3684897A (en) * 1970-08-19 1972-08-15 Cogar Corp Dynamic mos memory array timing system
US3858184A (en) * 1973-01-22 1974-12-31 Monolithic Syst Corp Automatic non-interrupting refresh technique
US3858185A (en) * 1973-07-18 1974-12-31 Intel Corp An mos dynamic memory array & refreshing system
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
US3980898A (en) * 1975-03-12 1976-09-14 National Semiconductor Corporation Sense amplifier with tri-state bus line capabilities
DE2556833C3 (de) * 1975-12-17 1981-11-05 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines Halbleiterspeichers
US4339676A (en) * 1979-08-13 1982-07-13 Texas Instruments Incorporated Logic circuit having a selectable output mode
US4467223A (en) * 1982-04-22 1984-08-21 Motorola, Inc. Enable gate for 3 state circuits
JPS60141011A (ja) * 1983-12-28 1985-07-26 Nec Corp コレクタ飽和抑制回路
US4607175A (en) * 1984-08-27 1986-08-19 Advanced Micro Devices, Inc. Non-inverting high speed low level gate to Schottky transistor-transistor logic translator
US5684427A (en) * 1996-01-19 1997-11-04 Allegro Microsystems, Inc. Bipolar driver circuit including primary and pre-driver transistors
US8865452B2 (en) * 2009-06-15 2014-10-21 Aurora Algae, Inc. Systems and methods for extracting lipids from wet algal biomass

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535699A (en) * 1968-01-15 1970-10-20 Ibm Complenmentary transistor memory cell using leakage current to sustain quiescent condition

Also Published As

Publication number Publication date
DE2141224A1 (de) 1972-02-24
US3736572A (en) 1973-05-29

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