NL7110895A - - Google Patents
Info
- Publication number
- NL7110895A NL7110895A NL7110895A NL7110895A NL7110895A NL 7110895 A NL7110895 A NL 7110895A NL 7110895 A NL7110895 A NL 7110895A NL 7110895 A NL7110895 A NL 7110895A NL 7110895 A NL7110895 A NL 7110895A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702044863 DE2044863A1 (de) | 1970-09-10 | 1970-09-10 | Verfahren zur Herstellung von Schottkydioden |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7110895A true NL7110895A (enExample) | 1972-03-14 |
Family
ID=5782110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7110895A NL7110895A (enExample) | 1970-09-10 | 1971-08-06 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3846192A (enExample) |
| DE (1) | DE2044863A1 (enExample) |
| FR (1) | FR2106413B1 (enExample) |
| GB (1) | GB1303235A (enExample) |
| NL (1) | NL7110895A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202006A (en) * | 1978-02-15 | 1980-05-06 | Rca Corporation | Semiconductor integrated circuit device |
| US4170501A (en) * | 1978-02-15 | 1979-10-09 | Rca Corporation | Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition |
| JPS5669844A (en) * | 1979-11-10 | 1981-06-11 | Toshiba Corp | Manufacture of semiconductor device |
| US4260431A (en) * | 1979-12-21 | 1981-04-07 | Harris Corporation | Method of making Schottky barrier diode by ion implantation and impurity diffusion |
| FR2472268A1 (fr) * | 1979-12-21 | 1981-06-26 | Thomson Csf | Procede de formation de caisson dans des circuits integres |
| US4281448A (en) * | 1980-04-14 | 1981-08-04 | Gte Laboratories Incorporated | Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation |
| JP3779366B2 (ja) * | 1996-02-21 | 2006-05-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
| EP0935816B1 (en) * | 1997-09-03 | 2006-04-05 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device with a schottky junction |
| US7064416B2 (en) * | 2001-11-16 | 2006-06-20 | International Business Machines Corporation | Semiconductor device and method having multiple subcollectors formed on a common wafer |
| US7528459B2 (en) * | 2003-05-27 | 2009-05-05 | Nxp B.V. | Punch-through diode and method of processing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE758683A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle |
-
1970
- 1970-09-10 DE DE19702044863 patent/DE2044863A1/de active Pending
-
1971
- 1971-08-06 NL NL7110895A patent/NL7110895A/xx unknown
- 1971-08-25 GB GB3981171A patent/GB1303235A/en not_active Expired
- 1971-09-03 FR FR7131855A patent/FR2106413B1/fr not_active Expired
- 1971-09-09 US US00178964A patent/US3846192A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3846192A (en) | 1974-11-05 |
| DE2044863A1 (de) | 1972-03-23 |
| GB1303235A (enExample) | 1973-01-17 |
| FR2106413A1 (enExample) | 1972-05-05 |
| FR2106413B1 (enExample) | 1977-03-18 |