NL7110738A - - Google Patents

Info

Publication number
NL7110738A
NL7110738A NL7110738A NL7110738A NL7110738A NL 7110738 A NL7110738 A NL 7110738A NL 7110738 A NL7110738 A NL 7110738A NL 7110738 A NL7110738 A NL 7110738A NL 7110738 A NL7110738 A NL 7110738A
Authority
NL
Netherlands
Application number
NL7110738A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7110738A publication Critical patent/NL7110738A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
NL7110738A 1970-08-07 1971-08-04 NL7110738A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7029261A FR2101023B1 (enExample) 1970-08-07 1970-08-07

Publications (1)

Publication Number Publication Date
NL7110738A true NL7110738A (enExample) 1972-02-09

Family

ID=9059985

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7110738A NL7110738A (enExample) 1970-08-07 1971-08-04

Country Status (4)

Country Link
DE (1) DE2139528C3 (enExample)
FR (1) FR2101023B1 (enExample)
GB (1) GB1364275A (enExample)
NL (1) NL7110738A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor

Also Published As

Publication number Publication date
GB1364275A (en) 1974-08-21
DE2139528C3 (de) 1980-11-20
FR2101023A1 (enExample) 1972-03-31
DE2139528B2 (de) 1980-03-27
FR2101023B1 (enExample) 1973-11-23
DE2139528A1 (de) 1972-03-09

Similar Documents

Publication Publication Date Title
AR204384A1 (enExample)
ATA96471A (enExample)
AU2044470A (enExample)
FR2101023B1 (enExample)
AU2017870A (enExample)
AU1517670A (enExample)
AU2085370A (enExample)
AU1716970A (enExample)
AR195465A1 (enExample)
AU1591370A (enExample)
AU2112570A (enExample)
AU2144270A (enExample)
AU2119370A (enExample)
AU1603270A (enExample)
AU1004470A (enExample)
AU1841070A (enExample)
AU2130770A (enExample)
AU1974970A (enExample)
AU1343870A (enExample)
AU1689770A (enExample)
AU1881070A (enExample)
AU1235770A (enExample)
AU1064870A (enExample)
AU1328670A (enExample)
AU2115870A (enExample)