NL7100218A - - Google Patents

Info

Publication number
NL7100218A
NL7100218A NL7100218A NL7100218A NL7100218A NL 7100218 A NL7100218 A NL 7100218A NL 7100218 A NL7100218 A NL 7100218A NL 7100218 A NL7100218 A NL 7100218A NL 7100218 A NL7100218 A NL 7100218A
Authority
NL
Netherlands
Application number
NL7100218A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP248870A external-priority patent/JPS4918583B1/ja
Priority claimed from JP248770A external-priority patent/JPS4918582B1/ja
Application filed filed Critical
Publication of NL7100218A publication Critical patent/NL7100218A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7100218A 1970-01-09 1971-01-08 NL7100218A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP248870A JPS4918583B1 (fr) 1970-01-09 1970-01-09
JP248770A JPS4918582B1 (fr) 1970-01-09 1970-01-09

Publications (1)

Publication Number Publication Date
NL7100218A true NL7100218A (fr) 1971-07-13

Family

ID=26335862

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7100218A NL7100218A (fr) 1970-01-09 1971-01-08

Country Status (4)

Country Link
US (1) US4007074A (fr)
DE (1) DE2100692A1 (fr)
FR (1) FR2075325A5 (fr)
NL (1) NL7100218A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356271A1 (fr) * 1976-02-06 1978-01-20 Labo Electronique Physique Croissance acceleree en phase vapeur
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
JPS5858317B2 (ja) * 1978-06-12 1983-12-24 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 気相成長法
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
JPS56138917A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Vapor phase epitaxial growth
JPS6055478B2 (ja) * 1982-10-19 1985-12-05 松下電器産業株式会社 気相成長方法
US4488914A (en) * 1982-10-29 1984-12-18 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
US4504329A (en) * 1983-10-06 1985-03-12 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
CA1250511A (fr) * 1984-10-31 1989-02-28 Rajaram Bhat Technique d'etirage epitaxial de pellicules semiconductrices composites
IL79612A0 (en) * 1985-08-09 1986-11-30 American Cyanamid Co Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources
FR2599558B1 (fr) * 1986-05-27 1988-09-02 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
US5445897A (en) * 1989-11-22 1995-08-29 Mitsubishi Kasei Polytec Company Epitaxial wafer and process for producing the same
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon
JPH04160100A (ja) * 1990-10-25 1992-06-03 Nikko Kyodo Co Ltd ３―５族化合物半導体のエピタキシャル成長方法
JP2012248803A (ja) * 2011-05-31 2012-12-13 Hitachi Cable Ltd 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620887A (fr) * 1959-06-18
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
NL295293A (fr) * 1962-07-13
NL6700080A (fr) * 1966-01-03 1967-07-04
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US3471324A (en) * 1966-12-23 1969-10-07 Texas Instruments Inc Epitaxial gallium arsenide

Also Published As

Publication number Publication date
FR2075325A5 (fr) 1971-10-08
USB105006I5 (fr) 1976-03-23
US4007074A (en) 1977-02-08
DE2100692A1 (de) 1971-07-15

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