NL7018330A - - Google Patents

Info

Publication number
NL7018330A
NL7018330A NL7018330A NL7018330A NL7018330A NL 7018330 A NL7018330 A NL 7018330A NL 7018330 A NL7018330 A NL 7018330A NL 7018330 A NL7018330 A NL 7018330A NL 7018330 A NL7018330 A NL 7018330A
Authority
NL
Netherlands
Application number
NL7018330A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7018330A publication Critical patent/NL7018330A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02417Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02485Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/063Gp II-IV-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
NL7018330A 1969-12-17 1970-12-16 NL7018330A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6943698A FR2071085A5 (de) 1969-12-17 1969-12-17

Publications (1)

Publication Number Publication Date
NL7018330A true NL7018330A (de) 1971-06-21

Family

ID=9044715

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7018330A NL7018330A (de) 1969-12-17 1970-12-16

Country Status (7)

Country Link
US (1) US3718511A (de)
BE (1) BE760375A (de)
DE (1) DE2062041C3 (de)
FR (1) FR2071085A5 (de)
GB (1) GB1340671A (de)
LU (1) LU62262A1 (de)
NL (1) NL7018330A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925147A (en) * 1971-08-30 1975-12-09 Hughes Aircraft Co Preparation of monocrystalline lead tin telluride
US3770565A (en) * 1972-01-05 1973-11-06 Us Navy Plastic mounting of epitaxially grown iv-vi compound semiconducting films
US3902924A (en) * 1973-08-30 1975-09-02 Honeywell Inc Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof
US4075043A (en) * 1976-09-01 1978-02-21 Rockwell International Corporation Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
US4263065A (en) * 1980-03-24 1981-04-21 Rockwell International Corporation Semi-open liquid phase epitaxial growth system
US4315477A (en) * 1980-03-24 1982-02-16 Rockwell International Corporation Semi-open liquid phase epitaxial growth system
JPS575325A (en) * 1980-06-12 1982-01-12 Junichi Nishizawa Semicondoctor p-n junction device and manufacture thereof
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
US4376663A (en) * 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
DE3722881C2 (de) * 1987-07-10 1995-02-16 Kernforschungsz Karlsruhe Schaltermatrix mit optisch nichtlinearen, z.B. bistabilen, Elementen und Verfahren zur Herstellung derselben
EP1039291A1 (de) * 1999-03-26 2000-09-27 Sony International (Europe) GmbH Optochemischer Fühler and Herstellungsmethode
IL165686A0 (en) * 2002-06-10 2006-01-15 Ii Vi Inc Radiation detector
JP7518785B2 (ja) * 2021-03-08 2024-07-18 株式会社東芝 光電変換素子及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295195B (de) * 1961-12-26 1969-05-14 Minnesota Mining & Mfg Thermoelektrisches Halbleitermaterial

Also Published As

Publication number Publication date
GB1340671A (en) 1973-12-12
DE2062041A1 (de) 1971-06-24
DE2062041B2 (de) 1979-06-21
FR2071085A5 (de) 1971-09-17
BE760375A (fr) 1971-05-17
DE2062041C3 (de) 1980-02-21
US3718511A (en) 1973-02-27
LU62262A1 (de) 1971-05-14

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