FR2071085A5 - - Google Patents
Info
- Publication number
- FR2071085A5 FR2071085A5 FR6943698A FR6943698A FR2071085A5 FR 2071085 A5 FR2071085 A5 FR 2071085A5 FR 6943698 A FR6943698 A FR 6943698A FR 6943698 A FR6943698 A FR 6943698A FR 2071085 A5 FR2071085 A5 FR 2071085A5
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02417—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/063—Gp II-IV-VI compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR6943698A FR2071085A5 (de) | 1969-12-17 | 1969-12-17 | |
GB5957170A GB1340671A (en) | 1969-12-17 | 1970-12-15 | Process for epitaxially growing semiconductor crystals of predetermined conductivity type |
BE760375A BE760375A (fr) | 1969-12-17 | 1970-12-15 | Procede pour fabriquer par epitaxie en phase liquide des jonctions semiconductrices dans des solutions solides, et detecteurs et emetteurs de lumiere comportant ces jonctions |
US00098262A US3718511A (en) | 1969-12-17 | 1970-12-15 | Process for epitaxially growing semiconductor crystals |
NL7018330A NL7018330A (de) | 1969-12-17 | 1970-12-16 | |
DE2062041A DE2062041C3 (de) | 1969-12-17 | 1970-12-16 | Verfahren zur Herstellung von Halbleiterübergängen durch Flüssigphasenepitaxie von festen Lösungen aus n/IV- und IV/Vl-Halbleiterverbindungen |
LU62262D LU62262A1 (de) | 1969-12-17 | 1970-12-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR6943698A FR2071085A5 (de) | 1969-12-17 | 1969-12-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2071085A5 true FR2071085A5 (de) | 1971-09-17 |
Family
ID=9044715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6943698A Expired FR2071085A5 (de) | 1969-12-17 | 1969-12-17 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3718511A (de) |
BE (1) | BE760375A (de) |
DE (1) | DE2062041C3 (de) |
FR (1) | FR2071085A5 (de) |
GB (1) | GB1340671A (de) |
LU (1) | LU62262A1 (de) |
NL (1) | NL7018330A (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3925147A (en) * | 1971-08-30 | 1975-12-09 | Hughes Aircraft Co | Preparation of monocrystalline lead tin telluride |
US3770565A (en) * | 1972-01-05 | 1973-11-06 | Us Navy | Plastic mounting of epitaxially grown iv-vi compound semiconducting films |
US3902924A (en) * | 1973-08-30 | 1975-09-02 | Honeywell Inc | Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof |
US4075043A (en) * | 1976-09-01 | 1978-02-21 | Rockwell International Corporation | Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique |
US4273596A (en) * | 1978-10-03 | 1981-06-16 | The United States Of America As Represented By The Secretary Of The Army | Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager |
US4263065A (en) * | 1980-03-24 | 1981-04-21 | Rockwell International Corporation | Semi-open liquid phase epitaxial growth system |
US4315477A (en) * | 1980-03-24 | 1982-02-16 | Rockwell International Corporation | Semi-open liquid phase epitaxial growth system |
JPS575325A (en) * | 1980-06-12 | 1982-01-12 | Junichi Nishizawa | Semicondoctor p-n junction device and manufacture thereof |
US4401487A (en) * | 1980-11-14 | 1983-08-30 | Hughes Aircraft Company | Liquid phase epitaxy of mercury cadmium telluride layer |
US4376663A (en) * | 1980-11-18 | 1983-03-15 | The United States Of America As Represented By The Secretary Of The Army | Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate |
US4357620A (en) * | 1980-11-18 | 1982-11-02 | The United States Of America As Represented By The Secretary Of The Army | Liquid-phase epitaxial growth of cdTe on HgCdTe |
DE3722881C2 (de) * | 1987-07-10 | 1995-02-16 | Kernforschungsz Karlsruhe | Schaltermatrix mit optisch nichtlinearen, z.B. bistabilen, Elementen und Verfahren zur Herstellung derselben |
EP1039291A1 (de) * | 1999-03-26 | 2000-09-27 | Sony International (Europe) GmbH | Optochemischer Fühler and Herstellungsmethode |
DE60324686D1 (de) * | 2002-06-10 | 2008-12-24 | Ii Vi Inc | Strahlungsdetektor |
JP2022136387A (ja) * | 2021-03-08 | 2022-09-21 | 株式会社東芝 | 光電変換素子及びその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1295195B (de) * | 1961-12-26 | 1969-05-14 | Minnesota Mining & Mfg | Thermoelektrisches Halbleitermaterial |
-
1969
- 1969-12-17 FR FR6943698A patent/FR2071085A5/fr not_active Expired
-
1970
- 1970-12-15 US US00098262A patent/US3718511A/en not_active Expired - Lifetime
- 1970-12-15 GB GB5957170A patent/GB1340671A/en not_active Expired
- 1970-12-15 BE BE760375A patent/BE760375A/xx unknown
- 1970-12-16 LU LU62262D patent/LU62262A1/xx unknown
- 1970-12-16 NL NL7018330A patent/NL7018330A/xx unknown
- 1970-12-16 DE DE2062041A patent/DE2062041C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3718511A (en) | 1973-02-27 |
NL7018330A (de) | 1971-06-21 |
GB1340671A (en) | 1973-12-12 |
LU62262A1 (de) | 1971-05-14 |
DE2062041C3 (de) | 1980-02-21 |
DE2062041A1 (de) | 1971-06-24 |
DE2062041B2 (de) | 1979-06-21 |
BE760375A (fr) | 1971-05-17 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |