NL7013553A - - Google Patents

Info

Publication number
NL7013553A
NL7013553A NL7013553A NL7013553A NL7013553A NL 7013553 A NL7013553 A NL 7013553A NL 7013553 A NL7013553 A NL 7013553A NL 7013553 A NL7013553 A NL 7013553A NL 7013553 A NL7013553 A NL 7013553A
Authority
NL
Netherlands
Application number
NL7013553A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7013553A publication Critical patent/NL7013553A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/017509Interface arrangements
    • H03K19/017518Interface arrangements using a combination of bipolar and field effect transistors [BIFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
NL7013553A 1969-09-15 1970-09-14 NL7013553A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85807369A 1969-09-15 1969-09-15

Publications (1)

Publication Number Publication Date
NL7013553A true NL7013553A (https=) 1971-03-17

Family

ID=25327415

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7013553A NL7013553A (https=) 1969-09-15 1970-09-14

Country Status (12)

Country Link
US (1) US3639787A (https=)
JP (1) JPS493312B1 (https=)
AT (1) AT324424B (https=)
BE (1) BE756139A (https=)
DE (1) DE2045618A1 (https=)
ES (1) ES383456A1 (https=)
FR (1) FR2061722B1 (https=)
GB (1) GB1325882A (https=)
MY (1) MY7400215A (https=)
NL (1) NL7013553A (https=)
SE (1) SE352987B (https=)
ZA (1) ZA706259B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015028012A1 (de) * 2013-09-02 2015-03-05 Conti Temic Microelectronic Gmbh Elektronische mehrkanalumschalteinrichtung

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039606A1 (de) * 1970-08-10 1972-02-17 Licentia Gmbh Elektrisches,dynamisch betriebenes Speicherelement
US4035662A (en) * 1970-11-02 1977-07-12 Texas Instruments Incorporated Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits
NL7107040A (https=) * 1971-05-22 1972-11-24
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
JPS547181Y2 (https=) * 1973-07-06 1979-04-04
JPS5714064B2 (https=) * 1974-04-25 1982-03-20
JPS5718710B2 (https=) * 1974-05-10 1982-04-17
JPS5648983B2 (https=) * 1974-05-10 1981-11-19
DE2539967C2 (de) * 1975-09-02 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Logikgrundschaltung
IT1073440B (it) * 1975-09-22 1985-04-17 Seiko Instr & Electronics Circuito elevatore di tensione realizzato in mos-fet
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4038567A (en) * 1976-03-22 1977-07-26 International Business Machines Corporation Memory input signal buffer circuit
US4891533A (en) * 1984-02-17 1990-01-02 Analog Devices, Incorporated MOS-cascoded bipolar current sources in non-epitaxial structure
US5103281A (en) * 1984-02-17 1992-04-07 Holloway Peter R MOS-cascoded bipolar current sources in non-epitaxial structure
KR920007535B1 (ko) * 1990-05-23 1992-09-05 삼성전자 주식회사 식별회로를 구비한 반도체 집적회로 칩
CN117457634A (zh) * 2018-12-10 2024-01-26 钰创科技股份有限公司 统一集成电路系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (https=) * 1961-09-08
NL293292A (https=) * 1962-06-11
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means
US3427445A (en) * 1965-12-27 1969-02-11 Ibm Full adder using field effect transistor of the insulated gate type
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration
US3390273A (en) * 1966-08-08 1968-06-25 Fairchild Camera Instr Co Electronic shutter with gating and storage features

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015028012A1 (de) * 2013-09-02 2015-03-05 Conti Temic Microelectronic Gmbh Elektronische mehrkanalumschalteinrichtung

Also Published As

Publication number Publication date
BE756139A (fr) 1971-02-15
DE2045618A1 (de) 1971-03-25
GB1325882A (en) 1973-08-08
JPS493312B1 (https=) 1974-01-25
US3639787A (en) 1972-02-01
MY7400215A (en) 1974-12-31
ZA706259B (en) 1971-06-30
FR2061722A1 (https=) 1971-06-25
FR2061722B1 (https=) 1976-10-29
AT324424B (de) 1975-08-25
ES383456A1 (es) 1973-02-16
SE352987B (https=) 1973-01-15

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