NL7011512A - - Google Patents

Info

Publication number
NL7011512A
NL7011512A NL7011512A NL7011512A NL7011512A NL 7011512 A NL7011512 A NL 7011512A NL 7011512 A NL7011512 A NL 7011512A NL 7011512 A NL7011512 A NL 7011512A NL 7011512 A NL7011512 A NL 7011512A
Authority
NL
Netherlands
Application number
NL7011512A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7011512A publication Critical patent/NL7011512A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7011512A 1969-08-06 1970-08-04 NL7011512A (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84801969A 1969-08-06 1969-08-06

Publications (1)

Publication Number Publication Date
NL7011512A true NL7011512A (cg-RX-API-DMAC7.html) 1971-02-09

Family

ID=25302125

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7011512A NL7011512A (cg-RX-API-DMAC7.html) 1969-08-06 1970-08-04

Country Status (7)

Country Link
US (1) US3631836A (cg-RX-API-DMAC7.html)
JP (1) JPS4840806B1 (cg-RX-API-DMAC7.html)
BE (1) BE754519A (cg-RX-API-DMAC7.html)
DE (1) DE2039172C3 (cg-RX-API-DMAC7.html)
FR (1) FR2057009B1 (cg-RX-API-DMAC7.html)
GB (1) GB1277315A (cg-RX-API-DMAC7.html)
NL (1) NL7011512A (cg-RX-API-DMAC7.html)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791887A (en) * 1971-06-28 1974-02-12 Gte Laboratories Inc Liquid-phase epitaxial growth under transient thermal conditions
US3765959A (en) * 1971-07-30 1973-10-16 Tokyo Shibaura Electric Co Method for the liquid phase epitaxial growth of semiconductor crystals
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
NL7209744A (cg-RX-API-DMAC7.html) * 1972-07-14 1974-01-16
JPS4945683A (cg-RX-API-DMAC7.html) * 1972-09-01 1974-05-01
JPS5314341B2 (cg-RX-API-DMAC7.html) * 1972-09-18 1978-05-17
AT341579B (de) * 1972-09-28 1978-02-10 Siemens Ag Flussigphasen-epitaxieverfahren
JPS5213510B2 (cg-RX-API-DMAC7.html) * 1973-02-26 1977-04-14
JPS5329429B2 (cg-RX-API-DMAC7.html) * 1973-03-20 1978-08-21
JPS5332525Y2 (cg-RX-API-DMAC7.html) * 1973-04-20 1978-08-11
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
JPS5420944Y2 (cg-RX-API-DMAC7.html) * 1973-11-09 1979-07-26
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4091257A (en) * 1975-02-24 1978-05-23 General Electric Company Deep diode devices and method and apparatus
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
JPS6034253B2 (ja) * 1976-05-21 1985-08-07 新技術開発事業団 液相エピタキシヤル成長方法
US4178195A (en) * 1976-11-22 1979-12-11 International Business Machines Corporation Semiconductor structure
JPS53148388A (en) * 1977-05-31 1978-12-23 Kokusai Denshin Denwa Co Ltd Method of producing compound semiconductor crystal
DE2847091C3 (de) * 1978-10-28 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zur Herstellung von Ga↓1↓-↓x↓Al↓x↓ AS:Si-Epitaxieschichten
FR2470810A1 (fr) * 1979-12-07 1981-06-12 Labo Electronique Physique Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues
JPS6028799B2 (ja) * 1982-04-28 1985-07-06 富士通株式会社 液相エピタキシヤル成長方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2243674A (en) * 1939-07-27 1941-05-27 Fred W Hoch Method and means for testing ink requirements
US3289241A (en) * 1964-09-24 1966-12-06 Exxon Research Engineering Co Device for applying coating materials in strips

Also Published As

Publication number Publication date
GB1277315A (en) 1972-06-14
DE2039172B2 (de) 1972-12-28
DE2039172A1 (de) 1971-02-18
US3631836A (en) 1972-01-04
FR2057009B1 (cg-RX-API-DMAC7.html) 1975-03-21
FR2057009A1 (cg-RX-API-DMAC7.html) 1971-05-07
JPS4840806B1 (cg-RX-API-DMAC7.html) 1973-12-03
DE2039172C3 (de) 1975-04-24
BE754519A (fr) 1971-02-08

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