NL7007988A - - Google Patents
Info
- Publication number
- NL7007988A NL7007988A NL7007988A NL7007988A NL7007988A NL 7007988 A NL7007988 A NL 7007988A NL 7007988 A NL7007988 A NL 7007988A NL 7007988 A NL7007988 A NL 7007988A NL 7007988 A NL7007988 A NL 7007988A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44073848A JPS4831514B1 (show.php) | 1969-09-18 | 1969-09-18 | |
| JP44073847A JPS5125712B1 (show.php) | 1969-09-18 | 1969-09-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL7007988A true NL7007988A (show.php) | 1971-03-22 |
| NL140659B NL140659B (nl) | 1973-12-17 |
Family
ID=26414996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL707007988A NL140659B (nl) | 1969-09-18 | 1970-06-02 | Werkwijze voor het vervaardigen van een veldeffecttransistor met een geisoleerde poort en een veldeffecttransistor vervaardigd volgens de werkwijze. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3764396A (show.php) |
| DE (1) | DE2028146A1 (show.php) |
| GB (2) | GB1316559A (show.php) |
| NL (1) | NL140659B (show.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2360992A1 (fr) * | 1976-08-05 | 1978-03-03 | Ibm | Procede de fabrication de transistors a effet de champ de type mos a canal court |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3975221A (en) * | 1973-08-29 | 1976-08-17 | American Micro-Systems, Inc. | Low capacitance V groove MOS NOR gate and method of manufacture |
| US3924265A (en) * | 1973-08-29 | 1975-12-02 | American Micro Syst | Low capacitance V groove MOS NOR gate and method of manufacture |
| US3909304A (en) * | 1974-05-03 | 1975-09-30 | Western Electric Co | Method of doping a semiconductor body |
| US3945857A (en) * | 1974-07-01 | 1976-03-23 | Fairchild Camera And Instrument Corporation | Method for fabricating double-diffused, lateral transistors |
| JPS5431872B2 (show.php) * | 1974-09-06 | 1979-10-09 | ||
| US4033787A (en) * | 1975-10-06 | 1977-07-05 | Honeywell Inc. | Fabrication of semiconductor devices utilizing ion implantation |
| US4038107B1 (en) * | 1975-12-03 | 1995-04-18 | Samsung Semiconductor Tele | Method for making transistor structures |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| EP0139663A1 (en) * | 1983-04-04 | 1985-05-08 | Motorola, Inc. | Self-aligned ldmos and method |
| IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
| DE69429913T2 (de) * | 1994-06-23 | 2002-10-31 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik |
| US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| US5896315A (en) * | 1997-04-11 | 1999-04-20 | Programmable Silicon Solutions | Nonvolatile memory |
| US5867425A (en) * | 1997-04-11 | 1999-02-02 | Wong; Ting-Wah | Nonvolatile memory capable of using substrate hot electron injection |
| US6426673B2 (en) | 1997-07-30 | 2002-07-30 | Programmable Silicon Solutions | High performance integrated radio frequency circuit devices |
| US6535034B1 (en) | 1997-07-30 | 2003-03-18 | Programmable Silicon Solutions | High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries |
| US5841694A (en) * | 1997-07-30 | 1998-11-24 | Programmable Silicon Solutions | High performance programmable interconnect |
| US6077746A (en) * | 1999-08-26 | 2000-06-20 | Taiwan Semiconductor Manufacturing Company | Using p-type halo implant as ROM cell isolation in flat-cell mask ROM process |
| JP2010114179A (ja) * | 2008-11-05 | 2010-05-20 | Hitachi Displays Ltd | 表示装置および表示装置の製造方法 |
| CN111785784B (zh) * | 2020-07-20 | 2025-10-28 | 杭州奥罗拉半导体有限公司 | 功率半导体器件及其形成方法 |
-
1970
- 1970-04-16 US US00029006A patent/US3764396A/en not_active Expired - Lifetime
- 1970-04-23 GB GB4499872A patent/GB1316559A/en not_active Expired
- 1970-05-15 GB GB2361972A patent/GB1313829A/en not_active Expired
- 1970-06-02 NL NL707007988A patent/NL140659B/xx unknown
- 1970-06-08 DE DE19702028146 patent/DE2028146A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2360992A1 (fr) * | 1976-08-05 | 1978-03-03 | Ibm | Procede de fabrication de transistors a effet de champ de type mos a canal court |
Also Published As
| Publication number | Publication date |
|---|---|
| US3764396A (en) | 1973-10-09 |
| DE2028146A1 (de) | 1971-04-08 |
| NL140659B (nl) | 1973-12-17 |
| GB1313829A (en) | 1973-04-18 |
| GB1316559A (en) | 1973-05-09 |