NL7001150A - - Google Patents
Info
- Publication number
- NL7001150A NL7001150A NL7001150A NL7001150A NL7001150A NL 7001150 A NL7001150 A NL 7001150A NL 7001150 A NL7001150 A NL 7001150A NL 7001150 A NL7001150 A NL 7001150A NL 7001150 A NL7001150 A NL 7001150A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP526969 | 1969-01-27 | ||
| JP526869 | 1969-01-27 | ||
| JP9572269 | 1969-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7001150A true NL7001150A (enExample) | 1970-07-29 |
Family
ID=27276681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7001150A NL7001150A (enExample) | 1969-01-27 | 1970-01-27 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2003558A1 (enExample) |
| GB (1) | GB1301702A (enExample) |
| NL (1) | NL7001150A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4219835A (en) * | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
| GB2129216B (en) * | 1982-10-12 | 1985-12-18 | Secr Defence | Field effect transistors |
| CN115831749A (zh) * | 2022-10-21 | 2023-03-21 | 电子科技大学长三角研究院(湖州) | 一种高可靠性全包围栅mosfet的制作方法 |
-
1970
- 1970-01-22 GB GB317970A patent/GB1301702A/en not_active Expired
- 1970-01-27 DE DE19702003558 patent/DE2003558A1/de active Pending
- 1970-01-27 NL NL7001150A patent/NL7001150A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1301702A (enExample) | 1973-01-04 |
| DE2003558A1 (de) | 1970-07-30 |