NL6912527A - - Google Patents
Info
- Publication number
- NL6912527A NL6912527A NL6912527A NL6912527A NL6912527A NL 6912527 A NL6912527 A NL 6912527A NL 6912527 A NL6912527 A NL 6912527A NL 6912527 A NL6912527 A NL 6912527A NL 6912527 A NL6912527 A NL 6912527A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Multimedia (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6195868 | 1968-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6912527A true NL6912527A (nl) | 1970-03-03 |
NL153724B NL153724B (nl) | 1977-06-15 |
Family
ID=13186192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL696912527A NL153724B (nl) | 1968-08-27 | 1969-08-18 | Halfgeleiderinrichting voor het omzetten van mechanische signalen in elektrische signalen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3746950A (nl) |
DE (1) | DE1941911C3 (nl) |
FR (1) | FR2016429B1 (nl) |
GB (1) | GB1265018A (nl) |
NL (1) | NL153724B (nl) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA920280A (en) * | 1970-11-16 | 1973-01-30 | Omron Tateisi Electronics Co. | Semiconductive transducer |
US3956527A (en) * | 1973-04-16 | 1976-05-11 | Ibm Corporation | Dielectrically isolated Schottky Barrier structure and method of forming the same |
JPS5254369A (en) * | 1975-10-29 | 1977-05-02 | Mitsubishi Electric Corp | Schottky barrier semiconductor device |
AU503379B1 (en) * | 1978-08-28 | 1979-08-30 | Babcock & Wilcox Co., The | Pressure transducer |
US4262399A (en) * | 1978-11-08 | 1981-04-21 | General Electric Co. | Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit |
US6653707B1 (en) * | 2000-09-08 | 2003-11-25 | Northrop Grumman Corporation | Low leakage Schottky diode |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3087099A (en) * | 1959-01-02 | 1963-04-23 | Sprague Electric Co | Narrow web mesa transistor structure |
FR1433160A (fr) * | 1964-05-30 | 1966-03-25 | Telefunken Patent | Transistor à base métallique |
DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
US3443041A (en) * | 1965-06-28 | 1969-05-06 | Bell Telephone Labor Inc | Surface-barrier diode transducer using high dielectric semiconductor material |
US3518508A (en) * | 1965-12-10 | 1970-06-30 | Matsushita Electric Ind Co Ltd | Transducer |
US3513366A (en) * | 1968-08-21 | 1970-05-19 | Motorola Inc | High voltage schottky barrier diode |
-
1969
- 1969-08-11 GB GB1265018D patent/GB1265018A/en not_active Expired
- 1969-08-15 US US00850372A patent/US3746950A/en not_active Expired - Lifetime
- 1969-08-18 NL NL696912527A patent/NL153724B/nl not_active IP Right Cessation
- 1969-08-18 DE DE1941911A patent/DE1941911C3/de not_active Expired
- 1969-08-18 FR FR6928247A patent/FR2016429B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3746950A (en) | 1973-07-17 |
NL153724B (nl) | 1977-06-15 |
DE1941911B2 (de) | 1974-01-24 |
GB1265018A (nl) | 1972-03-01 |
DE1941911A1 (de) | 1970-03-05 |
FR2016429A1 (nl) | 1970-05-08 |
DE1941911C3 (de) | 1978-05-24 |
FR2016429B1 (nl) | 1973-10-19 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: MATSUSHITA |
|
V4 | Discontinued because of reaching the maximum lifetime of a patent |