NL6912470A - - Google Patents

Info

Publication number
NL6912470A
NL6912470A NL6912470A NL6912470A NL6912470A NL 6912470 A NL6912470 A NL 6912470A NL 6912470 A NL6912470 A NL 6912470A NL 6912470 A NL6912470 A NL 6912470A NL 6912470 A NL6912470 A NL 6912470A
Authority
NL
Netherlands
Application number
NL6912470A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6912470A publication Critical patent/NL6912470A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of switching materials, e.g. deposition of layers
    • H10N70/026Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/231Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/884Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
NL6912470A 1968-08-22 1969-08-15 NL6912470A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75453368A 1968-08-22 1968-08-22

Publications (1)

Publication Number Publication Date
NL6912470A true NL6912470A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-02-24

Family

ID=25035211

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6912470A NL6912470A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-08-22 1969-08-15

Country Status (9)

Country Link
US (1) US3571673A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE737612A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1939280A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2016174B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1280689A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IL (1) IL32582A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6912470A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
RO (1) RO59767A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE359402B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656029A (en) * 1970-12-31 1972-04-11 Ibm BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT
US3872492A (en) * 1972-07-26 1975-03-18 Energy Conversion Devices Inc Radiation hardened field effect transistor
US4064757A (en) * 1976-10-18 1977-12-27 Allied Chemical Corporation Glassy metal alloy temperature sensing elements for resistance thermometers
EP0095283A3 (en) * 1982-05-15 1984-12-27 The British Petroleum Company p.l.c. Memory device
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
WO1992013359A1 (en) * 1991-01-17 1992-08-06 Crosspoint Solutions, Inc. An improved antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US5233217A (en) * 1991-05-03 1993-08-03 Crosspoint Solutions Plug contact with antifuse
US5329153A (en) * 1992-04-10 1994-07-12 Crosspoint Solutions, Inc. Antifuse with nonstoichiometric tin layer and method of manufacture thereof
US7038935B2 (en) * 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
CN102751319B (zh) * 2012-07-04 2015-04-15 中国科学院上海微系统与信息技术研究所 基于硫系化合物的浪涌保护器件及其制备方法
CN102923676B (zh) * 2012-10-25 2014-10-15 中国科学院上海微系统与信息技术研究所 一种适用于浪涌保护器件的硫系化合物薄膜材料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1060505A (en) * 1964-03-25 1967-03-01 Nippon Telegraph & Telephone Improvements in or relating to semiconductor devices
DE1213076B (de) * 1964-07-04 1966-03-24 Danfoss As Elektronisches Festkoerperbauelement zum Schalten
DE1266894B (de) * 1965-03-03 1968-04-25 Danfoss As Sperrschichtfreies Halbleiterschaltelement
US3409400A (en) * 1967-03-10 1968-11-05 Du Pont Binary, ternary and quaternary compounds composed of silicon, nickel, arsenic, and phosphorus

Also Published As

Publication number Publication date
DE1939280A1 (de) 1970-02-26
SE359402B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-08-27
IL32582A (en) 1973-05-31
RO59767A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-06-15
BE737612A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-02-02
GB1280689A (en) 1972-07-05
US3571673A (en) 1971-03-23
IL32582A0 (en) 1969-09-25
FR2016174B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-06-14
FR2016174A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-05-08

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