NL6909488A - - Google Patents
Info
- Publication number
- NL6909488A NL6909488A NL6909488A NL6909488A NL6909488A NL 6909488 A NL6909488 A NL 6909488A NL 6909488 A NL6909488 A NL 6909488A NL 6909488 A NL6909488 A NL 6909488A NL 6909488 A NL6909488 A NL 6909488A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681769635 DE1769635A1 (de) | 1968-06-20 | 1968-06-20 | Duenne Halbleiter-Aufwachsschicht auf tonerdearmen,tiegelgezogenem Magnesium-Aluminium-Spinell-Einkristall,sowie Verfahren zur Herstellung der Schicht und zur Herstellung der Einkristalle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6909488A true NL6909488A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-12-23 |
Family
ID=5700215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6909488A NL6909488A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-06-20 | 1969-06-20 |
Country Status (9)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3883313A (en) * | 1972-12-14 | 1975-05-13 | Rca Corp | Modified czochralski-grown magnesium aluminate spinel and method of making same |
| US3917462A (en) * | 1974-07-26 | 1975-11-04 | Union Carbide Corp | Method of producing sodium beta-alumina single crystals |
| DE3840609A1 (de) * | 1988-12-02 | 1990-06-07 | Maier Kg Andreas | Laserskalpell |
| US6839362B2 (en) * | 2001-05-22 | 2005-01-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cobalt-doped saturable absorber Q-switches and laser systems |
| US6844084B2 (en) * | 2002-04-03 | 2005-01-18 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel substrate and heteroepitaxial growth of III-V materials thereon |
| US20050061230A1 (en) * | 2003-09-23 | 2005-03-24 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
| US7326477B2 (en) * | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
| US7045223B2 (en) * | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
| US7919815B1 (en) | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
| CN109668862B (zh) * | 2017-10-17 | 2021-02-05 | 中国科学院沈阳自动化研究所 | 一种基于激光诱导击穿光谱的铝电解质分子比检测方法 |
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1968
- 1968-06-20 DE DE19681769635 patent/DE1769635A1/de active Pending
- 1968-12-24 FR FR1599437D patent/FR1599437A/fr not_active Expired
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1969
- 1969-06-16 US US833342A patent/US3625868A/en not_active Expired - Lifetime
- 1969-06-18 AT AT578069A patent/AT310252B/de not_active IP Right Cessation
- 1969-06-18 CH CH927969A patent/CH525026A/de not_active IP Right Cessation
- 1969-06-19 SE SE08824/69A patent/SE361418B/xx unknown
- 1969-06-19 GB GB1229508D patent/GB1229508A/en not_active Expired
- 1969-06-20 JP JP44048384A patent/JPS499907B1/ja active Pending
- 1969-06-20 NL NL6909488A patent/NL6909488A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH525026A (de) | 1972-07-15 |
| AT310252B (de) | 1973-09-25 |
| FR1599437A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-07-15 |
| DE1769635A1 (de) | 1972-03-30 |
| GB1229508A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-04-21 |
| SE361418B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-11-05 |
| JPS499907B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-07 |
| US3625868A (en) | 1971-12-07 |