NL6907778A - - Google Patents

Info

Publication number
NL6907778A
NL6907778A NL6907778A NL6907778A NL6907778A NL 6907778 A NL6907778 A NL 6907778A NL 6907778 A NL6907778 A NL 6907778A NL 6907778 A NL6907778 A NL 6907778A NL 6907778 A NL6907778 A NL 6907778A
Authority
NL
Netherlands
Application number
NL6907778A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6907778A publication Critical patent/NL6907778A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
NL6907778A 1968-05-21 1969-05-21 NL6907778A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73080468A 1968-05-21 1968-05-21

Publications (1)

Publication Number Publication Date
NL6907778A true NL6907778A (de) 1969-11-25

Family

ID=24936875

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6907778A NL6907778A (de) 1968-05-21 1969-05-21

Country Status (5)

Country Link
US (1) US3635771A (de)
DE (1) DE1924825A1 (de)
FR (1) FR2008978A1 (de)
GB (1) GB1266444A (de)
NL (1) NL6907778A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836408A (en) * 1970-12-21 1974-09-17 Hitachi Ltd Production of epitaxial films of semiconductor compound material
FR2133498B1 (de) * 1971-04-15 1977-06-03 Labo Electronique Physique
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
US3823685A (en) * 1971-08-05 1974-07-16 Ncr Co Processing apparatus
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US4132816A (en) * 1976-02-25 1979-01-02 United Technologies Corporation Gas phase deposition of aluminum using a complex aluminum halide of an alkali metal or an alkaline earth metal as an activator
US4262630A (en) * 1977-01-04 1981-04-21 Bochkarev Ellin P Method of applying layers of source substance over recipient and device for realizing same
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
US4411729A (en) * 1979-09-29 1983-10-25 Fujitsu Limited Method for a vapor phase growth of a compound semiconductor
JPS6055478B2 (ja) * 1982-10-19 1985-12-05 松下電器産業株式会社 気相成長方法
US4632710A (en) * 1983-05-10 1986-12-30 Raytheon Company Vapor phase epitaxial growth of carbon doped layers of Group III-V materials
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
CN1904128A (zh) * 2005-07-29 2007-01-31 深圳富泰宏精密工业有限公司 真空室进气调节装置及调节方法
US10655219B1 (en) * 2009-04-14 2020-05-19 Goodrich Corporation Containment structure for creating composite structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL275516A (de) * 1961-03-02
NL298006A (de) * 1962-12-07 1900-01-01
US3297501A (en) * 1963-12-31 1967-01-10 Ibm Process for epitaxial growth of semiconductor single crystals
US3361600A (en) * 1965-08-09 1968-01-02 Ibm Method of doping epitaxially grown semiconductor material

Also Published As

Publication number Publication date
GB1266444A (de) 1972-03-08
DE1924825A1 (de) 1969-11-27
FR2008978A1 (de) 1970-01-30
US3635771A (en) 1972-01-18

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