NL6905527A - - Google Patents

Info

Publication number
NL6905527A
NL6905527A NL6905527A NL6905527A NL6905527A NL 6905527 A NL6905527 A NL 6905527A NL 6905527 A NL6905527 A NL 6905527A NL 6905527 A NL6905527 A NL 6905527A NL 6905527 A NL6905527 A NL 6905527A
Authority
NL
Netherlands
Application number
NL6905527A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6905527A publication Critical patent/NL6905527A/xx

Links

Classifications

    • H10W74/43—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
NL6905527A 1968-04-11 1969-04-10 NL6905527A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72053868A 1968-04-11 1968-04-11
US31774372 USRE28386E (en) 1968-04-11 1972-12-22 Method of treating semiconductor devices to improve lifetime

Publications (1)

Publication Number Publication Date
NL6905527A true NL6905527A (cg-RX-API-DMAC10.html) 1969-10-14

Family

ID=26981115

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6905527A NL6905527A (cg-RX-API-DMAC10.html) 1968-04-11 1969-04-10

Country Status (5)

Country Link
US (2) US3556880A (cg-RX-API-DMAC10.html)
DE (1) DE1918556A1 (cg-RX-API-DMAC10.html)
FR (1) FR2006056B1 (cg-RX-API-DMAC10.html)
GB (1) GB1262967A (cg-RX-API-DMAC10.html)
NL (1) NL6905527A (cg-RX-API-DMAC10.html)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007297A (en) * 1971-09-20 1977-02-08 Rca Corporation Method of treating semiconductor device to improve its electrical characteristics
US3837905A (en) * 1971-09-22 1974-09-24 Gen Motors Corp Thermal oxidation of silicon
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
WO1981000487A1 (en) * 1979-08-13 1981-02-19 Ncr Co Hydrogen annealing process for silicon gate memory device
US4566913A (en) * 1984-07-30 1986-01-28 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced electron trapping
CN100465742C (zh) * 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
EP0612102B1 (en) 1993-02-15 2001-09-26 Semiconductor Energy Laboratory Co., Ltd. Process for the fabrication of a crystallised semiconductor layer
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US6875628B1 (en) 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP3450376B2 (ja) 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5529937A (en) * 1993-07-27 1996-06-25 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistor
US5915174A (en) 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645379B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US7056381B1 (en) * 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL95308C (cg-RX-API-DMAC10.html) * 1956-02-29 1960-09-15
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
US2953486A (en) * 1959-06-01 1960-09-20 Bell Telephone Labor Inc Junction formation by thermal oxidation of semiconductive material
US3085033A (en) * 1960-03-08 1963-04-09 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3193419A (en) * 1960-12-30 1965-07-06 Texas Instruments Inc Outdiffusion method
NL286405A (cg-RX-API-DMAC10.html) * 1961-12-13
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
GB1060925A (en) * 1964-04-27 1967-03-08 Westinghouse Electric Corp Growth of insulating films such as for semiconductor devices
SE329599B (cg-RX-API-DMAC10.html) * 1967-02-13 1970-10-19 Asea Ab
US3518134A (en) * 1967-08-14 1970-06-30 Stanford Research Inst Gaseous etching of molybdenum

Also Published As

Publication number Publication date
US3556880A (en) 1971-01-19
FR2006056A1 (cg-RX-API-DMAC10.html) 1969-12-19
FR2006056B1 (cg-RX-API-DMAC10.html) 1973-11-16
GB1262967A (en) 1972-02-09
DE1918556A1 (de) 1970-02-05
USRE28386E (en) 1975-04-08

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