NL6814870A - - Google Patents

Info

Publication number
NL6814870A
NL6814870A NL6814870A NL6814870A NL6814870A NL 6814870 A NL6814870 A NL 6814870A NL 6814870 A NL6814870 A NL 6814870A NL 6814870 A NL6814870 A NL 6814870A NL 6814870 A NL6814870 A NL 6814870A
Authority
NL
Netherlands
Application number
NL6814870A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6814870A publication Critical patent/NL6814870A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/146—Sheet resistance, dopant parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/172—Vidicons
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/917—Plural dopants of same conductivity type in same region

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
NL6814870A 1967-10-18 1968-10-17 NL6814870A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67619767A 1967-10-18 1967-10-18

Publications (1)

Publication Number Publication Date
NL6814870A true NL6814870A (xx) 1969-04-22

Family

ID=24713601

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6814870A NL6814870A (xx) 1967-10-18 1968-10-17

Country Status (7)

Country Link
US (1) US3458782A (xx)
BE (1) BE722438A (xx)
DE (1) DE1803126A1 (xx)
FR (1) FR1589334A (xx)
GB (1) GB1228627A (xx)
NL (1) NL6814870A (xx)
SE (1) SE331722B (xx)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569758A (en) * 1968-04-18 1971-03-09 Tokyo Shibaura Electric Co Semiconductor photo-electric converting devices having depressions in the semiconductor substrate and image pickup tubes using same
US3634692A (en) * 1968-07-03 1972-01-11 Texas Instruments Inc Schottky barrier light sensitive storage device formed by random metal particles
US3585430A (en) * 1968-08-23 1971-06-15 Rca Corp Gallium arsenide phosphide camera tube target having a semi-insulating layer on the scanned surface
US3579012A (en) * 1968-10-16 1971-05-18 Philips Corp Imaging device with combined thin monocrystalline semiconductive target-window assembly
US3875448A (en) * 1968-10-23 1975-04-01 Varian Associates Camera tube having a target formed by an array of phototransistors
NL6816923A (xx) * 1968-11-27 1970-05-29
US3617753A (en) * 1969-01-13 1971-11-02 Tokyo Shibaura Electric Co Semiconductor photoelectric converting device
DE1907649B2 (de) * 1969-02-15 1972-02-10 Licentia Patent Verwaltungs GmbH, 6000 Frankfurt Bildaufnahmeroehre
JPS4915646B1 (xx) * 1969-04-02 1974-04-16
NL153030B (nl) * 1969-09-05 1977-04-15 Hitachi Ltd Licht-uitzendende halfgeleiderdiode.
US3879714A (en) * 1970-08-20 1975-04-22 Siemens Ag Method of recording information with a picture storage tube and reading without erasing the information
US3699404A (en) * 1971-02-24 1972-10-17 Rca Corp Negative effective electron affinity emitters with drift fields using deep acceptor doping
US3761895A (en) * 1971-03-17 1973-09-25 Gen Electric Method and apparatus for storing and reading out charge in an insulating layer
FR19021E (fr) * 1971-04-21 1914-09-01 United Shoe Machinery Co Fr Machine à coudre les boutonnières
US3677280A (en) * 1971-06-21 1972-07-18 Fairchild Camera Instr Co Optimum high gain-bandwidth phototransistor structure
US3748585A (en) * 1971-11-15 1973-07-24 Tektronix Inc Silicon diode array scan converter storage tube and method of operation
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
US3983574A (en) * 1973-06-01 1976-09-28 Raytheon Company Semiconductor devices having surface state control
US4103203A (en) * 1974-09-09 1978-07-25 Rca Corporation Wafer mounting structure for pickup tube
US4029965A (en) * 1975-02-18 1977-06-14 North American Philips Corporation Variable gain X-ray image intensifier tube
GB1536412A (en) * 1975-05-14 1978-12-20 English Electric Valve Co Ltd Photocathodes
US4146904A (en) * 1977-12-19 1979-03-27 General Electric Company Radiation detector
DE2909956A1 (de) * 1979-03-14 1980-09-18 Licentia Gmbh Halbleiter-glas-verbundwerkstoff
EP0083983A1 (en) * 1982-01-12 1983-07-20 Harry Smith Road barriers and road signs

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119522A (en) * 1964-08-19 1968-07-10 Mullard Ltd Improvements in opto-electronic semiconductor devices
US3401294A (en) * 1965-02-08 1968-09-10 Westinghouse Electric Corp Storage tube
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array
US3403278A (en) * 1967-02-07 1968-09-24 Bell Telephone Labor Inc Camera tube target including n-type semiconductor having higher concentration of deep donors than shallow donors

Also Published As

Publication number Publication date
DE1803126A1 (de) 1969-06-26
FR1589334A (xx) 1970-03-23
GB1228627A (xx) 1971-04-15
US3458782A (en) 1969-07-29
BE722438A (xx) 1969-04-01
SE331722B (xx) 1971-01-11
DE1803126B2 (xx) 1974-10-10

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