NL6801367A - - Google Patents

Info

Publication number
NL6801367A
NL6801367A NL6801367A NL6801367A NL6801367A NL 6801367 A NL6801367 A NL 6801367A NL 6801367 A NL6801367 A NL 6801367A NL 6801367 A NL6801367 A NL 6801367A NL 6801367 A NL6801367 A NL 6801367A
Authority
NL
Netherlands
Application number
NL6801367A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6801367A publication Critical patent/NL6801367A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225Diffusion sources
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material
    • Y10S252/951Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Compositions (AREA)
NL6801367A 1967-04-20 1968-01-30 NL6801367A (forum.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0109426 1967-04-20

Publications (1)

Publication Number Publication Date
NL6801367A true NL6801367A (forum.php) 1968-10-21

Family

ID=7529513

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6801367A NL6801367A (forum.php) 1967-04-20 1968-01-30

Country Status (5)

Country Link
US (1) US3540951A (forum.php)
DE (1) DE1644003A1 (forum.php)
FR (1) FR1569941A (forum.php)
GB (1) GB1170709A (forum.php)
NL (1) NL6801367A (forum.php)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3658584A (en) * 1970-09-21 1972-04-25 Monsanto Co Semiconductor doping compositions
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US3962000A (en) * 1974-01-07 1976-06-08 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping
US3928096A (en) * 1974-01-07 1975-12-23 Owens Illinois Inc Boron doping of semiconductors
US3931056A (en) * 1974-08-26 1976-01-06 The Carborundum Company Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates
US3954525A (en) * 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus
DE102014109179B4 (de) * 2014-07-01 2023-09-14 Universität Konstanz Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302804A (forum.php) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
DE1644003A1 (de) 1970-09-24
US3540951A (en) 1970-11-17
FR1569941A (forum.php) 1969-04-28
GB1170709A (en) 1969-11-12

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