NL6716658A - - Google Patents

Info

Publication number
NL6716658A
NL6716658A NL6716658A NL6716658A NL6716658A NL 6716658 A NL6716658 A NL 6716658A NL 6716658 A NL6716658 A NL 6716658A NL 6716658 A NL6716658 A NL 6716658A NL 6716658 A NL6716658 A NL 6716658A
Authority
NL
Netherlands
Application number
NL6716658A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6716658A publication Critical patent/NL6716658A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/172—Vidicons

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
NL6716658A 1966-12-29 1967-12-07 NL6716658A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US605715A US3403284A (en) 1966-12-29 1966-12-29 Target structure storage device using diode array

Publications (1)

Publication Number Publication Date
NL6716658A true NL6716658A (enExample) 1968-07-01

Family

ID=24424889

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6716658A NL6716658A (enExample) 1966-12-29 1967-12-07

Country Status (3)

Country Link
US (1) US3403284A (enExample)
BE (1) BE708684A (enExample)
NL (1) NL6716658A (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3458782A (en) * 1967-10-18 1969-07-29 Bell Telephone Labor Inc Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production
US3439214A (en) * 1968-03-04 1969-04-15 Fairchild Camera Instr Co Beam-junction scan converter
US3474285A (en) * 1968-03-27 1969-10-21 Bell Telephone Labor Inc Information storage devices
US3496404A (en) * 1968-03-27 1970-02-17 United Detector Technology Inc Radiation transducer
US3576392A (en) * 1968-06-26 1971-04-27 Rca Corp Semiconductor vidicon target having electronically alterable light response characteristics
US3634692A (en) * 1968-07-03 1972-01-11 Texas Instruments Inc Schottky barrier light sensitive storage device formed by random metal particles
US3560756A (en) * 1968-08-28 1971-02-02 Bell Telephone Labor Inc Optical storage device with solid state light actuated scanning means for solid state output means
US3541384A (en) * 1968-09-09 1970-11-17 Texas Instruments Inc Image storage apparatus
US3536949A (en) * 1968-09-09 1970-10-27 Texas Instruments Inc Image storage device
US3875448A (en) * 1968-10-23 1975-04-01 Varian Associates Camera tube having a target formed by an array of phototransistors
NL6816451A (enExample) * 1968-11-19 1970-05-21
US3599055A (en) * 1968-11-25 1971-08-10 Trw Inc Image sensor with silicone diode array
NL6816923A (enExample) * 1968-11-27 1970-05-29
US3548233A (en) * 1968-11-29 1970-12-15 Rca Corp Charge storage device with pn junction diode array target having semiconductor contact pads
DE1907649B2 (de) * 1969-02-15 1972-02-10 Licentia Patent Verwaltungs GmbH, 6000 Frankfurt Bildaufnahmeroehre
JPS4915646B1 (enExample) * 1969-04-02 1974-04-16
US3601888A (en) * 1969-04-25 1971-08-31 Gen Electric Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor
FR2052345A5 (enExample) * 1969-06-02 1971-04-09 Ibm
US3841928A (en) * 1969-06-06 1974-10-15 I Miwa Production of semiconductor photoelectric conversion target
US3631292A (en) * 1969-09-23 1971-12-28 Bell Telephone Labor Inc Image storage tube
US3646390A (en) * 1969-11-04 1972-02-29 Rca Corp Image storage system
US3647438A (en) * 1969-12-29 1972-03-07 Rca Corp Method of making high area density array photomasks having matching registry
US3701914A (en) * 1970-03-03 1972-10-31 Bell Telephone Labor Inc Storage tube with array on pnpn diodes
JPS5130438B1 (enExample) * 1970-04-06 1976-09-01
US3890523A (en) * 1970-04-07 1975-06-17 Thomson Csf Vidicon target consisting of silicon dioxide layer on silicon
US3746908A (en) * 1970-08-03 1973-07-17 Gen Electric Solid state light sensitive storage array
US3676741A (en) * 1970-12-09 1972-07-11 Bell Telephone Labor Inc Semiconductor target structure for image converting device comprising an array of silver contacts having discontinuous nodular structure
US3725711A (en) * 1971-06-01 1973-04-03 Texas Instruments Inc Image pick-up tube support structure for semiconductive target
US3778657A (en) * 1972-02-09 1973-12-11 Matsushita Electric Industrial Co Ltd Target having a mosaic made up of a plurality of p-n junction elements
US3904911A (en) * 1972-06-05 1975-09-09 Siemens Ag Light-sensitive target for vidicon picture tube
US3792197A (en) * 1972-07-31 1974-02-12 Bell Telephone Labor Inc Solid-state diode array camera tube having electronic control of light sensitivity
US3951552A (en) * 1972-08-07 1976-04-20 Massachusetts Institute Of Technology Photometer-digitizer system
US3787720A (en) * 1973-03-28 1974-01-22 Hughes Aircraft Co Semiconductor vidicon and process for fabricating same
US3983574A (en) * 1973-06-01 1976-09-28 Raytheon Company Semiconductor devices having surface state control
JPS50151487A (enExample) * 1974-05-24 1975-12-05
GB1554590A (en) * 1975-10-08 1979-10-24 Rca Corp Sensing elements for charge storage devices
US4547957A (en) * 1982-06-11 1985-10-22 Rca Corporation Imaging device having improved high temperature performance
US4689873A (en) * 1983-04-28 1987-09-01 Rca Corporation Imaging device having two anti-reflection layers on a surface of silicon wafer
US4967249A (en) * 1989-03-17 1990-10-30 Loral Fairchild Corporation Gain compression photodetector array
US4958207A (en) * 1989-03-17 1990-09-18 Loral Fairchild Corporation Floating diode gain compression
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US6473388B1 (en) * 2000-08-31 2002-10-29 Hewlett Packard Company Ultra-high density information storage device based on modulated cathodoconductivity
WO2010138795A1 (en) * 2009-05-28 2010-12-02 The Ohio State University Miniature phase-corrected antennas for high resolution focal plane thz imaging arrays

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL259237A (enExample) * 1959-12-24

Also Published As

Publication number Publication date
BE708684A (enExample) 1968-05-02
US3403284A (en) 1968-09-24

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