NL6709192A - - Google Patents

Info

Publication number
NL6709192A
NL6709192A NL6709192A NL6709192A NL6709192A NL 6709192 A NL6709192 A NL 6709192A NL 6709192 A NL6709192 A NL 6709192A NL 6709192 A NL6709192 A NL 6709192A NL 6709192 A NL6709192 A NL 6709192A
Authority
NL
Netherlands
Application number
NL6709192A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6709192A priority Critical patent/NL6709192A/xx
Priority to US735703A priority patent/US3529217A/en
Priority to SE08770/68A priority patent/SE352195B/xx
Priority to DE1764565A priority patent/DE1764565C3/de
Priority to GB1231493D priority patent/GB1231493A/en
Priority to CH969568A priority patent/CH492306A/de
Priority to AT623568A priority patent/AT284924B/de
Priority to JP43045539A priority patent/JPS5110075B1/ja
Priority to FR1602803D priority patent/FR1602803A/fr
Priority to BE717461D priority patent/BE717461A/xx
Publication of NL6709192A publication Critical patent/NL6709192A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
NL6709192A 1967-07-01 1967-07-01 NL6709192A (en:Method)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NL6709192A NL6709192A (en:Method) 1967-07-01 1967-07-01
US735703A US3529217A (en) 1967-07-01 1968-06-10 Photosensitive semiconductor device
SE08770/68A SE352195B (en:Method) 1967-07-01 1968-06-27
DE1764565A DE1764565C3 (de) 1967-07-01 1968-06-27 Strahlungsempfindliches Halbleiterbauelement
GB1231493D GB1231493A (en:Method) 1967-07-01 1968-06-28
CH969568A CH492306A (de) 1967-07-01 1968-06-28 Strahlungsempfindliches Halbleiterbauelement
AT623568A AT284924B (de) 1967-07-01 1968-06-28 Strahlungsempfindliches Halbleiterbauelement
JP43045539A JPS5110075B1 (en:Method) 1967-07-01 1968-07-01
FR1602803D FR1602803A (en:Method) 1967-07-01 1968-07-01
BE717461D BE717461A (en:Method) 1967-07-01 1968-07-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6709192A NL6709192A (en:Method) 1967-07-01 1967-07-01

Publications (1)

Publication Number Publication Date
NL6709192A true NL6709192A (en:Method) 1969-01-03

Family

ID=19800600

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6709192A NL6709192A (en:Method) 1967-07-01 1967-07-01

Country Status (10)

Country Link
US (1) US3529217A (en:Method)
JP (1) JPS5110075B1 (en:Method)
AT (1) AT284924B (en:Method)
BE (1) BE717461A (en:Method)
CH (1) CH492306A (en:Method)
DE (1) DE1764565C3 (en:Method)
FR (1) FR1602803A (en:Method)
GB (1) GB1231493A (en:Method)
NL (1) NL6709192A (en:Method)
SE (1) SE352195B (en:Method)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
US3704375A (en) * 1970-05-05 1972-11-28 Barnes Eng Co Monolithic detector construction of photodetectors
JPS5521470B1 (en:Method) * 1971-03-10 1980-06-10
US3893150A (en) * 1971-04-22 1975-07-01 Philips Corp Semiconductor device having an electroluminescent diode
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
FR2158128B1 (en:Method) * 1971-11-04 1976-10-29 Comp Generale Electricite
JPS5641186B2 (en:Method) * 1972-03-03 1981-09-26
US3952324A (en) * 1973-01-02 1976-04-20 Hughes Aircraft Company Solar panel mounted blocking diode
FR2228299B1 (en:Method) * 1973-05-04 1977-09-02 Radiotechnique Compelec
US3893229A (en) * 1973-10-29 1975-07-08 Gen Electric Mounting for light-emitting diode pellet and method for the fabrication thereof
FR2253277B1 (en:Method) * 1973-11-30 1977-08-12 Silec Semi Conducteurs
GB1503223A (en) * 1975-07-26 1978-03-08 Int Computers Ltd Formation of buried layers in a substrate
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor
US4157560A (en) * 1977-12-30 1979-06-05 International Business Machines Corporation Photo detector cell
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
CA1200622A (en) * 1981-12-04 1986-02-11 Western Electric Company, Incorporated Collector for radiation-generated current carriers in a semiconductor structure
JPS58138187A (ja) * 1982-02-12 1983-08-16 Toshiba Corp 固体イメ−ジセンサ
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
JPS62109376A (ja) * 1985-11-08 1987-05-20 Nissan Motor Co Ltd 受光用半導体装置
WO2012169211A1 (ja) * 2011-06-09 2012-12-13 パナソニック株式会社 光学素子とその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor

Also Published As

Publication number Publication date
DE1764565B2 (de) 1978-03-30
SE352195B (en:Method) 1972-12-18
DE1764565C3 (de) 1978-12-07
BE717461A (en:Method) 1969-01-02
JPS5110075B1 (en:Method) 1976-04-01
DE1764565A1 (de) 1971-08-26
AT284924B (de) 1970-10-12
CH492306A (de) 1970-06-15
US3529217A (en) 1970-09-15
GB1231493A (en:Method) 1971-05-12
FR1602803A (en:Method) 1971-02-01

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