NL6700992A - - Google Patents

Info

Publication number
NL6700992A
NL6700992A NL6700992A NL6700992A NL6700992A NL 6700992 A NL6700992 A NL 6700992A NL 6700992 A NL6700992 A NL 6700992A NL 6700992 A NL6700992 A NL 6700992A NL 6700992 A NL6700992 A NL 6700992A
Authority
NL
Netherlands
Application number
NL6700992A
Other versions
NL157145B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6700992A publication Critical patent/NL6700992A/xx
Publication of NL157145B publication Critical patent/NL157145B/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
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    • H01L2224/05147—Copper [Cu] as principal constituent
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    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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    • H01L2224/05644—Gold [Au] as principal constituent
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Ceramic Products (AREA)
  • Coating With Molten Metal (AREA)
NL6700992.A 1966-01-20 1967-01-20 Werkwijze voor het vervaardigen van een isolerend dragerlichaam, dat elektrisch en mechanisch is verbonden met ten minste een, een ketenelement bevattend plaatje, en isolerend dragerlichaam met ten minste een, een ketenelement bevattend plaatje, vervaardigd volgens deze werkwijze. NL157145B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52198866A 1966-01-20 1966-01-20

Publications (2)

Publication Number Publication Date
NL6700992A true NL6700992A (fr) 1967-07-21
NL157145B NL157145B (nl) 1978-06-15

Family

ID=24078966

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6700992.A NL157145B (nl) 1966-01-20 1967-01-20 Werkwijze voor het vervaardigen van een isolerend dragerlichaam, dat elektrisch en mechanisch is verbonden met ten minste een, een ketenelement bevattend plaatje, en isolerend dragerlichaam met ten minste een, een ketenelement bevattend plaatje, vervaardigd volgens deze werkwijze.

Country Status (8)

Country Link
US (1) US3458925A (fr)
BE (1) BE692824A (fr)
CH (1) CH447300A (fr)
DE (1) DE1300788C2 (fr)
ES (1) ES335777A1 (fr)
FR (1) FR1509407A (fr)
GB (1) GB1097898A (fr)
NL (1) NL157145B (fr)

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US3719981A (en) * 1971-11-24 1973-03-13 Rca Corp Method of joining solder balls to solder bumps
US3894329A (en) * 1972-07-28 1975-07-15 Sperry Rand Corp Method of making high density electronic interconnections in a termination device
US3869787A (en) * 1973-01-02 1975-03-11 Honeywell Inf Systems Method for precisely aligning circuit devices coarsely positioned on a substrate
US3839727A (en) * 1973-06-25 1974-10-01 Ibm Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound
US4032058A (en) * 1973-06-29 1977-06-28 Ibm Corporation Beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads
US3881884A (en) * 1973-10-12 1975-05-06 Ibm Method for the formation of corrosion resistant electronic interconnections
JPS54139415A (en) * 1978-04-21 1979-10-29 Hitachi Ltd Semiconductor channel switch
US4246147A (en) * 1979-06-04 1981-01-20 International Business Machines Corporation Screenable and strippable solder mask and use thereof
US4290079A (en) * 1979-06-29 1981-09-15 International Business Machines Corporation Improved solder interconnection between a semiconductor device and a supporting substrate
JPS5728337A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Connecting constructin of semiconductor element
US4505029A (en) * 1981-03-23 1985-03-19 General Electric Company Semiconductor device with built-up low resistance contact
DE3276333D1 (en) * 1982-10-28 1987-06-19 Ibm Method and apparatus for vacuum evaporation coating using an electron gun
US4545610A (en) * 1983-11-25 1985-10-08 International Business Machines Corporation Method for forming elongated solder connections between a semiconductor device and a supporting substrate
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US4742023A (en) * 1986-08-28 1988-05-03 Fujitsu Limited Method for producing a semiconductor device
US4760948A (en) * 1986-12-23 1988-08-02 Rca Corporation Leadless chip carrier assembly and method
US4935627A (en) * 1989-03-13 1990-06-19 Honeywell Inc. Electrical interconnection apparatus for achieving precise alignment of hybrid components
FR2651025B1 (fr) * 1989-08-18 1991-10-18 Commissariat Energie Atomique Assemblage de pieces faisant un angle entre elles et procede d'obtention de cet assemblage
US5255840A (en) * 1989-12-26 1993-10-26 Praxair Technology, Inc. Fluxless solder coating and joining
JPH045844A (ja) * 1990-04-23 1992-01-09 Nippon Mektron Ltd Ｉｃ搭載用多層回路基板及びその製造法
US5198695A (en) * 1990-12-10 1993-03-30 Westinghouse Electric Corp. Semiconductor wafer with circuits bonded to a substrate
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US5186383A (en) * 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
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US5396702A (en) * 1993-12-15 1995-03-14 At&T Corp. Method for forming solder bumps on a substrate using an electrodeposition technique
US5473814A (en) * 1994-01-07 1995-12-12 International Business Machines Corporation Process for surface mounting flip chip carrier modules
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US6528346B2 (en) 1994-01-20 2003-03-04 Fujitsu Limited Bump-forming method using two plates and electronic device
US6319810B1 (en) 1994-01-20 2001-11-20 Fujitsu Limited Method for forming solder bumps
US6025258A (en) * 1994-01-20 2000-02-15 Fujitsu Limited Method for fabricating solder bumps by forming solder balls with a solder ball forming member
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BE692824A (fr) 1967-07-03
GB1097898A (en) 1968-01-03
NL157145B (nl) 1978-06-15
DE1300788B (fr) 1974-11-21
FR1509407A (fr) 1968-01-12
DE1300788C2 (de) 1974-11-21
CH447300A (de) 1967-11-30
US3458925A (en) 1969-08-05
ES335777A1 (es) 1967-12-01

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