NL6616657A - - Google Patents
Info
- Publication number
- NL6616657A NL6616657A NL6616657A NL6616657A NL6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H10P50/691—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB51621/65A GB1158585A (en) | 1965-12-06 | 1965-12-06 | Gate Controlled Switches |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6616657A true NL6616657A (ref) | 1967-06-07 |
Family
ID=10460749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6616657A NL6616657A (ref) | 1965-12-06 | 1966-11-25 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3468017A (ref) |
| DE (1) | DE1564295B2 (ref) |
| FR (1) | FR1503285A (ref) |
| GB (1) | GB1158585A (ref) |
| NL (1) | NL6616657A (ref) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2108781A1 (ref) * | 1970-10-05 | 1972-05-26 | Radiotechnique Compelec |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1248584A (en) * | 1968-03-05 | 1971-10-06 | Lucas Industries Ltd | Thyristors and other semi-conductor devices |
| US4171995A (en) * | 1975-10-20 | 1979-10-23 | Semiconductor Research Foundation | Epitaxial deposition process for producing an electrostatic induction type thyristor |
| US4029528A (en) * | 1976-08-30 | 1977-06-14 | Rca Corporation | Method of selectively doping a semiconductor body |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1170555B (de) * | 1956-07-23 | 1964-05-21 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps |
| US2873222A (en) * | 1957-11-07 | 1959-02-10 | Bell Telephone Labor Inc | Vapor-solid diffusion of semiconductive material |
| US3042565A (en) * | 1959-01-02 | 1962-07-03 | Sprague Electric Co | Preparation of a moated mesa and related semiconducting devices |
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
-
1965
- 1965-12-06 GB GB51621/65A patent/GB1158585A/en not_active Expired
-
1966
- 1966-11-15 US US594559A patent/US3468017A/en not_active Expired - Lifetime
- 1966-11-25 NL NL6616657A patent/NL6616657A/xx unknown
- 1966-11-26 DE DE19661564295 patent/DE1564295B2/de active Pending
- 1966-12-06 FR FR86267A patent/FR1503285A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2108781A1 (ref) * | 1970-10-05 | 1972-05-26 | Radiotechnique Compelec |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1564295B2 (de) | 1973-08-23 |
| GB1158585A (en) | 1969-07-16 |
| US3468017A (en) | 1969-09-23 |
| DE1564295A1 (de) | 1970-09-17 |
| FR1503285A (fr) | 1967-11-24 |