NL6616657A - - Google Patents
Info
- Publication number
- NL6616657A NL6616657A NL6616657A NL6616657A NL6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB51621/65A GB1158585A (en) | 1965-12-06 | 1965-12-06 | Gate Controlled Switches |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6616657A true NL6616657A (xx) | 1967-06-07 |
Family
ID=10460749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6616657A NL6616657A (xx) | 1965-12-06 | 1966-11-25 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3468017A (xx) |
| DE (1) | DE1564295B2 (xx) |
| FR (1) | FR1503285A (xx) |
| GB (1) | GB1158585A (xx) |
| NL (1) | NL6616657A (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2108781A1 (xx) * | 1970-10-05 | 1972-05-26 | Radiotechnique Compelec |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1248584A (en) * | 1968-03-05 | 1971-10-06 | Lucas Industries Ltd | Thyristors and other semi-conductor devices |
| US4171995A (en) * | 1975-10-20 | 1979-10-23 | Semiconductor Research Foundation | Epitaxial deposition process for producing an electrostatic induction type thyristor |
| US4029528A (en) * | 1976-08-30 | 1977-06-14 | Rca Corporation | Method of selectively doping a semiconductor body |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1170555B (de) * | 1956-07-23 | 1964-05-21 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps |
| US2873222A (en) * | 1957-11-07 | 1959-02-10 | Bell Telephone Labor Inc | Vapor-solid diffusion of semiconductive material |
| US3042565A (en) * | 1959-01-02 | 1962-07-03 | Sprague Electric Co | Preparation of a moated mesa and related semiconducting devices |
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
-
1965
- 1965-12-06 GB GB51621/65A patent/GB1158585A/en not_active Expired
-
1966
- 1966-11-15 US US594559A patent/US3468017A/en not_active Expired - Lifetime
- 1966-11-25 NL NL6616657A patent/NL6616657A/xx unknown
- 1966-11-26 DE DE19661564295 patent/DE1564295B2/de active Pending
- 1966-12-06 FR FR86267A patent/FR1503285A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2108781A1 (xx) * | 1970-10-05 | 1972-05-26 | Radiotechnique Compelec |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1158585A (en) | 1969-07-16 |
| FR1503285A (fr) | 1967-11-24 |
| US3468017A (en) | 1969-09-23 |
| DE1564295B2 (de) | 1973-08-23 |
| DE1564295A1 (de) | 1970-09-17 |