NL6616657A - - Google Patents

Info

Publication number
NL6616657A
NL6616657A NL6616657A NL6616657A NL6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A NL 6616657 A NL6616657 A NL 6616657A
Authority
NL
Netherlands
Application number
NL6616657A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6616657A publication Critical patent/NL6616657A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
NL6616657A 1965-12-06 1966-11-25 NL6616657A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB51621/65A GB1158585A (en) 1965-12-06 1965-12-06 Gate Controlled Switches

Publications (1)

Publication Number Publication Date
NL6616657A true NL6616657A (cs) 1967-06-07

Family

ID=10460749

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6616657A NL6616657A (cs) 1965-12-06 1966-11-25

Country Status (5)

Country Link
US (1) US3468017A (cs)
DE (1) DE1564295B2 (cs)
FR (1) FR1503285A (cs)
GB (1) GB1158585A (cs)
NL (1) NL6616657A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781A1 (cs) * 1970-10-05 1972-05-26 Radiotechnique Compelec

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248584A (en) * 1968-03-05 1971-10-06 Lucas Industries Ltd Thyristors and other semi-conductor devices
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4029528A (en) * 1976-08-30 1977-06-14 Rca Corporation Method of selectively doping a semiconductor body

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1170555B (de) * 1956-07-23 1964-05-21 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps
US2873222A (en) * 1957-11-07 1959-02-10 Bell Telephone Labor Inc Vapor-solid diffusion of semiconductive material
US3042565A (en) * 1959-01-02 1962-07-03 Sprague Electric Co Preparation of a moated mesa and related semiconducting devices
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781A1 (cs) * 1970-10-05 1972-05-26 Radiotechnique Compelec

Also Published As

Publication number Publication date
DE1564295A1 (de) 1970-09-17
US3468017A (en) 1969-09-23
DE1564295B2 (de) 1973-08-23
FR1503285A (fr) 1967-11-24
GB1158585A (en) 1969-07-16

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