NL6611792A - - Google Patents

Info

Publication number
NL6611792A
NL6611792A NL6611792A NL6611792A NL6611792A NL 6611792 A NL6611792 A NL 6611792A NL 6611792 A NL6611792 A NL 6611792A NL 6611792 A NL6611792 A NL 6611792A NL 6611792 A NL6611792 A NL 6611792A
Authority
NL
Netherlands
Application number
NL6611792A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6611792A publication Critical patent/NL6611792A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
NL6611792A 1965-08-25 1966-08-22 NL6611792A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48235465A 1965-08-25 1965-08-25
US77933968A 1968-11-27 1968-11-27

Publications (1)

Publication Number Publication Date
NL6611792A true NL6611792A (en) 1967-02-27

Family

ID=27047253

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6611792A NL6611792A (en) 1965-08-25 1966-08-22

Country Status (4)

Country Link
US (1) US3472679A (en)
DE (1) DE1621325B2 (en)
GB (1) GB1160895A (en)
NL (1) NL6611792A (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR95985E (en) * 1966-05-16 1972-05-19 Rank Xerox Ltd Glassy semiconductors and their manufacturing process in the form of thin films.
US3776181A (en) * 1970-02-02 1973-12-04 Ransburg Electro Coating Corp Deposition apparatus for an organometallic material
US3906892A (en) * 1971-04-27 1975-09-23 Cit Alcatel Plasma deposition of thin layers of substrated or the like
FR2236963B1 (en) * 1973-07-13 1977-02-18 Cit Alcatel
US4099969A (en) * 1974-10-10 1978-07-11 Xerox Corporation Coating method to improve adhesion of photoconductors
DE2549405A1 (en) * 1974-11-05 1976-05-06 Eastman Kodak Co METHOD OF DEPOSITING A LAYER OF PHOTOSENSITIVE MATERIAL ON A SURFACE
US4091257A (en) * 1975-02-24 1978-05-23 General Electric Company Deep diode devices and method and apparatus
US4013463A (en) * 1975-08-15 1977-03-22 Leder Lewis B Photoreceptor fabrication utilizing AC ion plating
US4132816A (en) * 1976-02-25 1979-01-02 United Technologies Corporation Gas phase deposition of aluminum using a complex aluminum halide of an alkali metal or an alkaline earth metal as an activator
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
JPS6029295B2 (en) * 1979-08-16 1985-07-10 舜平 山崎 Non-single crystal film formation method
US4509451A (en) * 1983-03-29 1985-04-09 Colromm, Inc. Electron beam induced chemical vapor deposition
DE3390522C2 (en) * 1983-08-25 1987-10-15 Vni Skij Instr Nyj I Cutting tool and process for its production
US4500565A (en) * 1983-09-28 1985-02-19 Ushio Denki Kabushiki Kaisha Deposition process
US4505949A (en) * 1984-04-25 1985-03-19 Texas Instruments Incorporated Thin film deposition using plasma-generated source gas
CN85106828B (en) * 1985-09-10 1987-09-09 张戈飞 Process for forming sulphide layer on the surface metal parts and apparatus therefor
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
US6015595A (en) * 1998-05-28 2000-01-18 Felts; John T. Multiple source deposition plasma apparatus
JP3697505B2 (en) * 2000-03-17 2005-09-21 国立大学法人東京工業大学 Thin film formation method
JP5164107B2 (en) * 2008-07-01 2013-03-13 株式会社ユーテック Plasma CVD apparatus, thin film manufacturing method, and magnetic recording medium manufacturing method
CN103874316B (en) * 2014-03-24 2016-05-11 青岛科技大学 A kind of design of use for laboratory induction plasma treatment facility

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2501563A (en) * 1946-02-20 1950-03-21 Libbey Owens Ford Glass Co Method of forming strongly adherent metallic compound films by glow discharge
US3024761A (en) * 1958-07-01 1962-03-13 Ibm Vacuum evaporation apparatus
US3108900A (en) * 1959-04-13 1963-10-29 Cornelius A Papp Apparatus and process for producing coatings on metals
US3290567A (en) * 1960-09-23 1966-12-06 Technical Ind Inc Controlled deposition and growth of polycrystalline films in a vacuum
US3310424A (en) * 1963-05-14 1967-03-21 Litton Systems Inc Method for providing an insulating film on a substrate
US3297465A (en) * 1963-12-31 1967-01-10 Ibm Method for producing organic plasma and for depositing polymer films
US3296115A (en) * 1964-03-02 1967-01-03 Schjeldahl Co G T Sputtering of metals wherein gas flow is confined to increase the purity of deposition
US3355371A (en) * 1964-06-29 1967-11-28 Gen Motors Corp Method of anodizing a metal in a plasma including connecting said metal in a separate electrical circuit
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
US3275412A (en) * 1965-02-04 1966-09-27 American Cyanamid Co Production of oxides by plasma process

Also Published As

Publication number Publication date
DE1621325B2 (en) 1975-08-07
DE1621325A1 (en) 1971-05-13
US3472679A (en) 1969-10-14
GB1160895A (en) 1969-08-06

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Legal Events

Date Code Title Description
BN A decision not to publish the application has become irrevocable