NL6611579A - - Google Patents

Info

Publication number
NL6611579A
NL6611579A NL6611579A NL6611579A NL6611579A NL 6611579 A NL6611579 A NL 6611579A NL 6611579 A NL6611579 A NL 6611579A NL 6611579 A NL6611579 A NL 6611579A NL 6611579 A NL6611579 A NL 6611579A
Authority
NL
Netherlands
Application number
NL6611579A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6611579A publication Critical patent/NL6611579A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/079—Inert carrier gas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
NL6611579A 1965-08-17 1966-08-17 NL6611579A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48045265A 1965-08-17 1965-08-17

Publications (1)

Publication Number Publication Date
NL6611579A true NL6611579A (fr) 1967-02-20

Family

ID=23908038

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6611579A NL6611579A (fr) 1965-08-17 1966-08-17

Country Status (4)

Country Link
US (1) US3522118A (fr)
DE (1) DE1521881A1 (fr)
GB (1) GB1113287A (fr)
NL (1) NL6611579A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808072A (en) * 1972-03-22 1974-04-30 Bell Telephone Labor Inc In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide
US3900363A (en) * 1972-11-15 1975-08-19 Nippon Columbia Method of making crystal
US3930908A (en) * 1974-09-30 1976-01-06 Rca Corporation Accurate control during vapor phase epitaxy
US4243865A (en) * 1976-05-14 1981-01-06 Data General Corporation Process for treating material in plasma environment
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US4468283A (en) * 1982-12-17 1984-08-28 Irfan Ahmed Method for etching and controlled chemical vapor deposition
US4671847A (en) * 1985-11-18 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Thermally-activated vapor etchant for InP
DE69117077T2 (de) * 1990-03-06 1996-06-27 Sumitomo Electric Industries Verfahren zum Aufwachsen einer Dünnschicht aus Diamant oder c-BN
US5534314A (en) * 1994-08-31 1996-07-09 University Of Virginia Patent Foundation Directed vapor deposition of electron beam evaporant
JP3269411B2 (ja) * 1996-12-04 2002-03-25 ヤマハ株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL123477C (fr) * 1958-05-16
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
DE1238105B (de) * 1963-07-17 1967-04-06 Siemens Ag Verfahren zum Herstellen von pn-UEbergaengen in Silizium
USB389017I5 (fr) * 1964-08-12
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits

Also Published As

Publication number Publication date
US3522118A (en) 1970-07-28
DE1521881A1 (de) 1969-10-16
GB1113287A (en) 1968-05-08

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