NL6609450A - - Google Patents
Info
- Publication number
- NL6609450A NL6609450A NL6609450A NL6609450A NL6609450A NL 6609450 A NL6609450 A NL 6609450A NL 6609450 A NL6609450 A NL 6609450A NL 6609450 A NL6609450 A NL 6609450A NL 6609450 A NL6609450 A NL 6609450A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES98119A DE1275996B (de) | 1965-07-10 | 1965-07-10 | Vorrichtung zum tiegelfreien Zonenschmelzen |
| DES0103418 | 1966-04-26 | ||
| US83802669A | 1969-06-20 | 1969-06-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6609450A true NL6609450A (US08063081-20111122-C00115.png) | 1967-01-11 |
Family
ID=27212947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6609450A NL6609450A (US08063081-20111122-C00115.png) | 1965-07-10 | 1966-07-06 |
Country Status (7)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3935059A (en) * | 1969-07-21 | 1976-01-27 | U.S. Philips Corporation | Method of producing single crystals of semiconductor material by floating-zone melting |
| DE102012213715A1 (de) * | 2012-08-02 | 2014-02-06 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone |
| CN103255473B (zh) * | 2013-04-25 | 2016-06-29 | 浙江晶盛机电股份有限公司 | 一种用于区熔炉的辅助加热装置及其单晶棒保温方法 |
| CN103255472B (zh) * | 2013-04-25 | 2016-12-28 | 浙江晶盛机电股份有限公司 | 具有双电源加热的区熔炉热场及保温方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA674121A (en) * | 1963-11-12 | Siemens-Schuckertwerke Aktiengesellschaft | Method and apparatus for producing a strip of hyperpure semiconductor material | |
| DE1188042B (de) * | 1954-01-29 | 1965-03-04 | Siemens Ag | Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers |
| DE1044768B (de) * | 1954-03-02 | 1958-11-27 | Siemens Ag | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers |
| US2932562A (en) * | 1956-12-27 | 1960-04-12 | Bell Telephone Labor Inc | Zone-melting with joule heat |
| NL112520C (US08063081-20111122-C00115.png) * | 1959-10-19 | |||
| DE1147206B (de) * | 1961-10-02 | 1963-04-18 | Siemens Ag | Verfahren zum Herstellen stabfoermiger Siliciumeinkristalle mit einer mittleren Versetzungsdichte durch tiegelloses Zonenschmelzen |
| DE1208292B (de) * | 1963-03-29 | 1966-01-05 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial |
| US3258314A (en) * | 1963-04-12 | 1966-06-28 | Westinghouse Electric Corp | Method for interior zone melting of a crystalline rod |
-
1965
- 1965-07-10 DE DES98119A patent/DE1275996B/de not_active Withdrawn
-
1966
- 1966-04-26 DE DE19661519889 patent/DE1519889B2/de not_active Withdrawn
- 1966-07-05 SE SE09151/66A patent/SE335852B/xx unknown
- 1966-07-06 NL NL6609450A patent/NL6609450A/xx unknown
- 1966-07-06 CH CH984866A patent/CH435207A/de unknown
- 1966-07-07 GB GB30649/66A patent/GB1148007A/en not_active Expired
- 1966-07-08 BE BE683853D patent/BE683853A/xx unknown
-
1969
- 1969-06-20 US US838026A patent/US3649210A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| BE683853A (US08063081-20111122-C00115.png) | 1967-01-09 |
| US3649210A (en) | 1972-03-14 |
| DE1519889A1 (de) | 1969-08-28 |
| DE1275996B (de) | 1968-08-29 |
| CH435207A (de) | 1967-05-15 |
| SE335852B (US08063081-20111122-C00115.png) | 1971-06-14 |
| DE1519889B2 (de) | 1970-10-15 |
| GB1148007A (en) | 1969-04-10 |
