NL6608585A - - Google Patents
Info
- Publication number
- NL6608585A NL6608585A NL6608585A NL6608585A NL6608585A NL 6608585 A NL6608585 A NL 6608585A NL 6608585 A NL6608585 A NL 6608585A NL 6608585 A NL6608585 A NL 6608585A NL 6608585 A NL6608585 A NL 6608585A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/46—
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- H10P14/6309—
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- H10P14/6322—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US466032A US3400308A (en) | 1965-06-22 | 1965-06-22 | Metallic contacts for semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6608585A true NL6608585A (cg-RX-API-DMAC10.html) | 1966-12-23 |
Family
ID=23850172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6608585A NL6608585A (cg-RX-API-DMAC10.html) | 1965-06-22 | 1966-06-21 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3400308A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1299078B (cg-RX-API-DMAC10.html) |
| GB (1) | GB1126406A (cg-RX-API-DMAC10.html) |
| NL (1) | NL6608585A (cg-RX-API-DMAC10.html) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT197436B (de) * | 1955-06-13 | 1958-04-25 | Philips Nv | Verfahren zum Anbringen eines Kontaktes auf Silizium |
| US2863105A (en) * | 1955-11-10 | 1958-12-02 | Hoffman Electronics Corp | Rectifying device |
| US2962394A (en) * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel |
| US3219890A (en) * | 1959-02-25 | 1965-11-23 | Transitron Electronic Corp | Semiconductor barrier-layer device and terminal structure thereon |
| AT231007B (de) * | 1962-04-18 | 1964-01-10 | Siemens Ag | Verfahren zur Herstellung eines Halbleiterbauelementes |
| CH396228A (de) * | 1962-05-29 | 1965-07-31 | Siemens Ag | Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium |
| NL294675A (cg-RX-API-DMAC10.html) * | 1962-06-29 | |||
| US3241931A (en) * | 1963-03-01 | 1966-03-22 | Rca Corp | Semiconductor devices |
| USB381501I5 (cg-RX-API-DMAC10.html) * | 1964-07-09 |
-
1965
- 1965-06-22 US US466032A patent/US3400308A/en not_active Expired - Lifetime
-
1966
- 1966-05-31 GB GB24301/66A patent/GB1126406A/en not_active Expired
- 1966-06-02 DE DER43398A patent/DE1299078B/de active Pending
- 1966-06-21 NL NL6608585A patent/NL6608585A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1126406A (en) | 1968-09-05 |
| DE1299078B (de) | 1969-07-10 |
| US3400308A (en) | 1968-09-03 |