NL6607682A - - Google Patents

Info

Publication number
NL6607682A
NL6607682A NL6607682A NL6607682A NL6607682A NL 6607682 A NL6607682 A NL 6607682A NL 6607682 A NL6607682 A NL 6607682A NL 6607682 A NL6607682 A NL 6607682A NL 6607682 A NL6607682 A NL 6607682A
Authority
NL
Netherlands
Application number
NL6607682A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6607682A publication Critical patent/NL6607682A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H1/02Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network of RC networks, e.g. integrated networks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802Resistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL6607682A 1965-06-04 1966-06-02 NL6607682A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH783765A CH423939A (fr) 1965-06-04 1965-06-04 Résistance diffusée dans un circuit intégré

Publications (1)

Publication Number Publication Date
NL6607682A true NL6607682A (ja) 1966-12-05

Family

ID=4331161

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6607682A NL6607682A (ja) 1965-06-04 1966-06-02

Country Status (6)

Country Link
US (1) US3491274A (ja)
JP (1) JPS4913911B1 (ja)
CH (1) CH423939A (ja)
DE (1) DE1590230A1 (ja)
GB (1) GB1089813A (ja)
NL (1) NL6607682A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3584269A (en) * 1968-10-11 1971-06-08 Ibm Diffused equal impedance interconnections for integrated circuits
US3619739A (en) * 1969-01-16 1971-11-09 Signetics Corp Bulk resistor and integrated circuit using the same
US3629667A (en) * 1969-03-14 1971-12-21 Ibm Semiconductor resistor with uniforms current distribution at its contact surface
JPS5937582B2 (ja) * 1981-06-29 1984-09-11 日本電気株式会社 半導体集積回路装置
EP0195232B1 (en) * 1985-03-20 1991-12-11 Hitachi, Ltd. Piezoresistive strain sensing device
DE3802796A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet mit schaltmitteln zur daempfung von nach aussen dringenden hochfrequenten stoerspannungen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device
US3317850A (en) * 1963-04-29 1967-05-02 Fairchild Camera Instr Co Temperature-stable differential amplifier using field-effect devices
US3271685A (en) * 1963-06-20 1966-09-06 Westinghouse Electric Corp Multipurpose molecular electronic semiconductor device for performing amplifier and oscillator-mixer functions including degenerative feedback means
BE650116A (ja) * 1963-07-05 1900-01-01
US3335340A (en) * 1964-02-24 1967-08-08 Ibm Combined transistor and testing structures and fabrication thereof

Also Published As

Publication number Publication date
CH423939A (fr) 1967-05-13
DE1590230A1 (de) 1970-05-06
GB1089813A (en) 1967-11-08
US3491274A (en) 1970-01-20
JPS4913911B1 (ja) 1974-04-03
CH783765A4 (ja) 1967-05-13

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