NL6604962A - - Google Patents
Info
- Publication number
- NL6604962A NL6604962A NL6604962A NL6604962A NL6604962A NL 6604962 A NL6604962 A NL 6604962A NL 6604962 A NL6604962 A NL 6604962A NL 6604962 A NL6604962 A NL 6604962A NL 6604962 A NL6604962 A NL 6604962A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6604962A NL6604962A (me) | 1966-04-14 | 1966-04-14 | |
| GB06564/67A GB1188797A (en) | 1966-04-14 | 1967-04-11 | Semiconductor Manufacture. |
| US630012A US3481031A (en) | 1966-04-14 | 1967-04-11 | Method of providing at least two juxtaposed contacts on a semiconductor body |
| DE19671614234 DE1614234A1 (de) | 1966-04-14 | 1967-04-11 | Verfahren zum Anbringen von mindestens zwei nebeneinanderliegenden Kontakten auf einem Halbleiterkoerper und durch Anwendung dieses Verfahrens hergestellte Halbleitervorrichtung |
| FR102838A FR1528710A (fr) | 1966-04-14 | 1967-04-14 | Procédé d'application de contacts sur un corps semiconducteur et dispositif à cet effet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6604962A NL6604962A (me) | 1966-04-14 | 1966-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6604962A true NL6604962A (me) | 1967-10-16 |
Family
ID=19796280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6604962A NL6604962A (me) | 1966-04-14 | 1966-04-14 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3481031A (me) |
| DE (1) | DE1614234A1 (me) |
| GB (1) | GB1188797A (me) |
| NL (1) | NL6604962A (me) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1233545A (me) * | 1967-08-18 | 1971-05-26 | ||
| GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
| US4127931A (en) * | 1974-10-04 | 1978-12-05 | Nippon Electric Co., Ltd. | Semiconductor device |
| US4144101A (en) * | 1978-06-05 | 1979-03-13 | International Business Machines Corporation | Process for providing self-aligned doping regions by ion-implantation and lift-off |
| GB2027986B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Infra-red detectors |
| GB2027556B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Manufacturing infra-red detectors |
| JPS5812365A (ja) * | 1981-07-15 | 1983-01-24 | Japan Electronic Ind Dev Assoc<Jeida> | 薄膜トランジスタ及びその製造方法 |
| US4404731A (en) * | 1981-10-01 | 1983-09-20 | Xerox Corporation | Method of forming a thin film transistor |
| JPS58170067A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
| JP3478012B2 (ja) * | 1995-09-29 | 2003-12-10 | ソニー株式会社 | 薄膜半導体装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2563503A (en) * | 1951-08-07 | Transistor | ||
| US2588254A (en) * | 1950-05-09 | 1952-03-04 | Purdue Research Foundation | Photoelectric and thermoelectric device utilizing semiconducting material |
| BE525823A (me) * | 1953-01-21 | |||
| US2787564A (en) * | 1954-10-28 | 1957-04-02 | Bell Telephone Labor Inc | Forming semiconductive devices by ionic bombardment |
| US2989385A (en) * | 1957-05-14 | 1961-06-20 | Bell Telephone Labor Inc | Process for ion bombarding and etching metal |
| US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
| US3298863A (en) * | 1964-05-08 | 1967-01-17 | Joseph H Mccusker | Method for fabricating thin film transistors |
-
1966
- 1966-04-14 NL NL6604962A patent/NL6604962A/xx unknown
-
1967
- 1967-04-11 GB GB06564/67A patent/GB1188797A/en not_active Expired
- 1967-04-11 US US630012A patent/US3481031A/en not_active Expired - Lifetime
- 1967-04-11 DE DE19671614234 patent/DE1614234A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1614234A1 (de) | 1970-08-27 |
| US3481031A (en) | 1969-12-02 |
| GB1188797A (en) | 1970-04-22 |