NL6604881A - - Google Patents

Info

Publication number
NL6604881A
NL6604881A NL6604881A NL6604881A NL6604881A NL 6604881 A NL6604881 A NL 6604881A NL 6604881 A NL6604881 A NL 6604881A NL 6604881 A NL6604881 A NL 6604881A NL 6604881 A NL6604881 A NL 6604881A
Authority
NL
Netherlands
Application number
NL6604881A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6604881A publication Critical patent/NL6604881A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6604881A 1965-04-08 1966-04-12 NL6604881A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT770165 1965-04-08

Publications (1)

Publication Number Publication Date
NL6604881A true NL6604881A (OSRAM) 1966-10-10

Family

ID=11125256

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6604881A NL6604881A (OSRAM) 1965-04-08 1966-04-12

Country Status (3)

Country Link
US (1) US3425880A (OSRAM)
GB (1) GB1079469A (OSRAM)
NL (1) NL6604881A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886002A (en) * 1973-06-20 1975-05-27 Jury Stepanovich Akimov Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2833678A (en) * 1955-09-27 1958-05-06 Rca Corp Methods of surface alloying with aluminum-containing solder
GB894255A (en) * 1957-05-02 1962-04-18 Sarkes Tarzian Semiconductor devices and method of manufacturing them
CH396228A (de) * 1962-05-29 1965-07-31 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium

Also Published As

Publication number Publication date
US3425880A (en) 1969-02-04
GB1079469A (en) 1967-08-16

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