NL6601707A - - Google Patents

Info

Publication number
NL6601707A
NL6601707A NL6601707A NL6601707A NL6601707A NL 6601707 A NL6601707 A NL 6601707A NL 6601707 A NL6601707 A NL 6601707A NL 6601707 A NL6601707 A NL 6601707A NL 6601707 A NL6601707 A NL 6601707A
Authority
NL
Netherlands
Application number
NL6601707A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR5078A external-priority patent/FR1432731A/fr
Priority claimed from FR45551A external-priority patent/FR89503E/fr
Application filed filed Critical
Publication of NL6601707A publication Critical patent/NL6601707A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10Solid or liquid components, e.g. Verneuil method
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1028Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Lasers (AREA)
NL6601707A 1965-02-10 1966-02-10 NL6601707A (US06294698-20010925-C00026.png)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR5078A FR1432731A (fr) 1965-02-10 1965-02-10 Procédé et dispositif de fabrication de rubis synthétique en particulier pour lasers
FR45551A FR89503E (fr) 1966-01-11 1966-01-11 Procédé et dispositif de fabrication de rubis synthétique en particulier pour lasers

Publications (1)

Publication Number Publication Date
NL6601707A true NL6601707A (US06294698-20010925-C00026.png) 1966-08-11

Family

ID=26161954

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6601707A NL6601707A (US06294698-20010925-C00026.png) 1965-02-10 1966-02-10

Country Status (7)

Country Link
US (1) US3519394A (US06294698-20010925-C00026.png)
JP (1) JPS5113751B1 (US06294698-20010925-C00026.png)
BE (1) BE676042A (US06294698-20010925-C00026.png)
CH (1) CH457373A (US06294698-20010925-C00026.png)
DE (1) DE1544278B2 (US06294698-20010925-C00026.png)
GB (1) GB1137732A (US06294698-20010925-C00026.png)
NL (1) NL6601707A (US06294698-20010925-C00026.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
DE2542886B2 (de) * 1975-09-25 1978-09-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zur Pulverförderung bei der Kristallzüchtung nach Verneuil
JPS62128309U (US06294698-20010925-C00026.png) * 1986-02-07 1987-08-14
US5665011A (en) * 1996-11-22 1997-09-09 Thomas; Robert Golf putter head

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1653022A (en) * 1924-07-12 1927-12-20 Westinghouse Electric & Mfg Co Apparatus for the production of artificial jewels or precious stones
US2525261A (en) * 1946-09-30 1950-10-10 James P Henderson Refrigerated ball dispenser
US2690062A (en) * 1949-12-21 1954-09-28 Union Carbide & Carbon Corp Synthetic corundum crystals and process for making same
GB697419A (en) * 1951-07-13 1953-09-23 Gen Electric Co Ltd Improvements in or relating to apparatus for manufacturing synthetic jewels
DE1188042B (de) * 1954-01-29 1965-03-04 Siemens Ag Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US2792287A (en) * 1956-04-04 1957-05-14 Nat Lead Co Synthetic rutile crystal and method for making same
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
US2965456A (en) * 1956-12-31 1960-12-20 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
US3086850A (en) * 1959-06-17 1963-04-23 Itt Method and means for growing and treating crystals
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
DE1188555B (de) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus

Also Published As

Publication number Publication date
JPS5113751B1 (US06294698-20010925-C00026.png) 1976-05-01
BE676042A (US06294698-20010925-C00026.png) 1966-06-16
DE1544278B2 (de) 1976-04-29
DE1544278A1 (de) 1970-05-21
GB1137732A (en) 1968-12-27
US3519394A (en) 1970-07-07
CH457373A (fr) 1968-06-15

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