NL6512036A - - Google Patents

Info

Publication number
NL6512036A
NL6512036A NL6512036A NL6512036A NL6512036A NL 6512036 A NL6512036 A NL 6512036A NL 6512036 A NL6512036 A NL 6512036A NL 6512036 A NL6512036 A NL 6512036A NL 6512036 A NL6512036 A NL 6512036A
Authority
NL
Netherlands
Application number
NL6512036A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6512036A publication Critical patent/NL6512036A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/059—Germanium on silicon or Ge-Si on III-V

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
NL6512036A 1964-09-23 1965-09-16 NL6512036A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US398540A US3366517A (en) 1964-09-23 1964-09-23 Formation of semiconductor devices

Publications (1)

Publication Number Publication Date
NL6512036A true NL6512036A (cs) 1966-03-24

Family

ID=23575772

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6512036A NL6512036A (cs) 1964-09-23 1965-09-16

Country Status (6)

Country Link
US (1) US3366517A (cs)
CH (1) CH438495A (cs)
DE (1) DE1288198B (cs)
GB (1) GB1045108A (cs)
NL (1) NL6512036A (cs)
SE (1) SE325081B (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2974262A (en) * 1957-06-11 1961-03-07 Abraham George Solid state device and method of making same
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
NL268758A (cs) * 1960-09-20
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3145125A (en) * 1961-07-10 1964-08-18 Ibm Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions

Also Published As

Publication number Publication date
CH438495A (de) 1967-06-30
DE1288198B (de) 1969-01-30
SE325081B (cs) 1970-06-22
US3366517A (en) 1968-01-30
GB1045108A (en) 1966-10-05

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