NL6414015A - - Google Patents

Info

Publication number
NL6414015A
NL6414015A NL6414015A NL6414015A NL6414015A NL 6414015 A NL6414015 A NL 6414015A NL 6414015 A NL6414015 A NL 6414015A NL 6414015 A NL6414015 A NL 6414015A NL 6414015 A NL6414015 A NL 6414015A
Authority
NL
Netherlands
Application number
NL6414015A
Other versions
NL147645B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6414015A publication Critical patent/NL6414015A/xx
Publication of NL147645B publication Critical patent/NL147645B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL646414015A 1963-12-23 1964-12-03 Werkwijze voor het vormen van monokristallijn halfgeleidermateriaal door aangroeiing en voorwerp, geheel of ten dele bestaande uit een aldus verkregen monokristal. NL147645B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US332563A US3392066A (en) 1963-12-23 1963-12-23 Method of vapor growing a homogeneous monocrystal

Publications (2)

Publication Number Publication Date
NL6414015A true NL6414015A (pt) 1965-06-24
NL147645B NL147645B (nl) 1975-11-17

Family

ID=23298791

Family Applications (1)

Application Number Title Priority Date Filing Date
NL646414015A NL147645B (nl) 1963-12-23 1964-12-03 Werkwijze voor het vormen van monokristallijn halfgeleidermateriaal door aangroeiing en voorwerp, geheel of ten dele bestaande uit een aldus verkregen monokristal.

Country Status (6)

Country Link
US (1) US3392066A (pt)
CH (1) CH426740A (pt)
DE (1) DE1544200C3 (pt)
GB (1) GB1087268A (pt)
NL (1) NL147645B (pt)
SE (1) SE319750B (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
CN114990358B (zh) * 2022-04-12 2023-02-03 中南大学 一种掺杂砷烯纳米片、及其制备方法和应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE618264A (pt) * 1959-06-18
NL275516A (pt) * 1961-03-02
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds

Also Published As

Publication number Publication date
US3392066A (en) 1968-07-09
DE1544200B2 (de) 1974-06-20
DE1544200C3 (de) 1975-11-27
SE319750B (pt) 1970-01-26
NL147645B (nl) 1975-11-17
GB1087268A (en) 1967-10-18
DE1544200A1 (de) 1970-08-13
CH426740A (de) 1966-12-31

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Legal Events

Date Code Title Description
VJC Lapsed due to non-payment of the due maintenance fee for the patent or patent application
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: IBM