NL293887A - - Google Patents
Info
- Publication number
- NL293887A NL293887A NL293887DA NL293887A NL 293887 A NL293887 A NL 293887A NL 293887D A NL293887D A NL 293887DA NL 293887 A NL293887 A NL 293887A
- Authority
- NL
- Netherlands
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
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- H10P14/24—
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- H10P14/274—
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- H10P14/2905—
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- H10P14/3411—
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- H10P14/3442—
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- H10P14/3444—
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- H10P14/6309—
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- H10P14/6322—
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- H10P14/6334—
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- H10P14/6682—
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- H10P14/69215—
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- H10P50/242—
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- H10P95/00—
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20155662A | 1962-06-11 | 1962-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL293887A true NL293887A (enExample) |
Family
ID=22746310
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL293887D NL293887A (enExample) | 1962-06-11 | ||
| NL63293887A NL142525B (nl) | 1962-06-11 | 1963-06-11 | Werkwijze ter vervaardiging van halfgeleiderlichamen, alsmede met deze werkwijze verkregen halfgeleiderlichamen. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL63293887A NL142525B (nl) | 1962-06-11 | 1963-06-11 | Werkwijze ter vervaardiging van halfgeleiderlichamen, alsmede met deze werkwijze verkregen halfgeleiderlichamen. |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE631658A (enExample) |
| DE (1) | DE1521834B2 (enExample) |
| GB (1) | GB1047942A (enExample) |
| NL (2) | NL142525B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2218567A (en) * | 1988-05-13 | 1989-11-15 | Philips Electronic Associated | A method of forming an epitaxial layer of silicon |
| JPH06232099A (ja) * | 1992-09-10 | 1994-08-19 | Mitsubishi Electric Corp | 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法 |
| GB2299894B (en) * | 1992-09-10 | 1997-01-22 | Mitsubishi Electric Corp | Method for producing a semiconductor laser device |
| EP1001458A1 (en) * | 1998-11-09 | 2000-05-17 | STMicroelectronics S.r.l. | Isotropic etching of silicon using hydrogen chloride |
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0
- BE BE631658D patent/BE631658A/xx unknown
- NL NL293887D patent/NL293887A/xx unknown
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1963
- 1963-04-22 GB GB15836/63A patent/GB1047942A/en not_active Expired
- 1963-06-11 DE DE19631521834 patent/DE1521834B2/de not_active Ceased
- 1963-06-11 NL NL63293887A patent/NL142525B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1047942A (en) | 1966-11-09 |
| NL142525B (nl) | 1974-06-17 |
| BE631658A (enExample) | |
| DE1521834B2 (de) | 1971-10-07 |
| DE1521834A1 (de) | 1970-01-08 |