NL293292A - - Google Patents
Info
- Publication number
- NL293292A NL293292A NL293292DA NL293292A NL 293292 A NL293292 A NL 293292A NL 293292D A NL293292D A NL 293292DA NL 293292 A NL293292 A NL 293292A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201456A US3243669A (en) | 1962-06-11 | 1962-06-11 | Surface-potential controlled semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
NL293292A true NL293292A (pl) |
Family
ID=22745889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL293292D NL293292A (pl) | 1962-06-11 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3243669A (pl) |
DE (1) | DE1211334B (pl) |
FR (1) | FR1362724A (pl) |
GB (1) | GB1033537A (pl) |
NL (1) | NL293292A (pl) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL274830A (pl) * | 1961-04-12 | |||
US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
US3408543A (en) * | 1964-06-01 | 1968-10-29 | Hitachi Ltd | Combination capacitor and fieldeffect transistor |
BE666834A (pl) * | 1964-07-13 | |||
GB1095412A (pl) * | 1964-08-26 | |||
GB1086128A (en) * | 1964-10-23 | 1967-10-04 | Motorola Inc | Fabrication of four-layer switch with controlled breakdown voltage |
US3484309A (en) * | 1964-11-09 | 1969-12-16 | Solitron Devices | Semiconductor device with a portion having a varying lateral resistivity |
US3372318A (en) * | 1965-01-22 | 1968-03-05 | Gen Electric | Semiconductor switches |
US3456168A (en) * | 1965-02-19 | 1969-07-15 | United Aircraft Corp | Structure and method for production of narrow doped region semiconductor devices |
US3397326A (en) * | 1965-03-30 | 1968-08-13 | Westinghouse Electric Corp | Bipolar transistor with field effect biasing means |
US3667115A (en) * | 1965-06-30 | 1972-06-06 | Ibm | Fabrication of semiconductor devices with cup-shaped regions |
US3346785A (en) * | 1965-08-19 | 1967-10-10 | Itt | Hidden emitter switching device |
US3459944A (en) * | 1966-01-04 | 1969-08-05 | Ibm | Photosensitive insulated gate field effect transistor |
GB1174899A (en) * | 1966-04-15 | 1969-12-17 | Westinghouse Brake & Signal | Improvements relating to Controllable Rectifier Devices |
GB1245765A (en) * | 1967-10-13 | 1971-09-08 | Gen Electric | Surface diffused semiconductor devices |
US3600642A (en) * | 1968-11-15 | 1971-08-17 | David F Allison | Mos structure with precisely controlled channel length and method |
US3597640A (en) * | 1969-04-10 | 1971-08-03 | Nat Semiconductor Corp | Short circuit protection means for semiconductive circuit apparatus |
NL161923C (nl) * | 1969-04-18 | 1980-03-17 | Philips Nv | Halfgeleiderinrichting. |
BE756139A (fr) * | 1969-09-15 | 1971-02-15 | Rca Corp | Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee |
JPS5135114B1 (pl) * | 1970-12-28 | 1976-09-30 | ||
US3711940A (en) * | 1971-02-08 | 1973-01-23 | Signetics Corp | Method for making mos structure with precisely controlled channel length |
US3684933A (en) * | 1971-06-21 | 1972-08-15 | Itt | Semiconductor device showing at least three successive zones of alternate opposite conductivity type |
US3740621A (en) * | 1971-08-30 | 1973-06-19 | Rca Corp | Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current |
US3858234A (en) * | 1973-01-08 | 1974-12-31 | Motorola Inc | Transistor having improved safe operating area |
DE2835089A1 (de) * | 1978-08-10 | 1980-03-20 | Siemens Ag | Thyristor |
DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
DE2915885C2 (de) * | 1979-04-19 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
DE2945324A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten |
DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
DE2945391A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem abschaltbaren emitter-kurzschluss |
DE3118353A1 (de) * | 1979-11-09 | 1982-12-09 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit abschaltbarem emitter-kurzschluss |
DE2945335A1 (de) * | 1979-11-09 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor |
DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
DE3018499A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
DE3018542A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb |
DE3112940A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb |
DE3112941A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb |
DE3112942A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor und verfahren zu seinem betrieb |
DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
DE3118317A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb |
DE3118318A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschlusspfaden und verfahren zu seinem betrieb |
DE3118291A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Triac und verfahren zu seinem betrieb |
DE3118354A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb |
DE3118347A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb |
DE3118305A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb |
DE3118293A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb |
US5111268A (en) * | 1981-12-16 | 1992-05-05 | General Electric Company | Semiconductor device with improved turn-off capability |
DE3227536A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Darlington-transistorschaltung |
DE3201545A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Planare halbleiteranordnung |
JPS6174362A (ja) * | 1984-09-19 | 1986-04-16 | Hitachi Ltd | 半導体装置 |
DE3435550A1 (de) * | 1984-09-27 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit erhoehter di/dt-festigkeit |
EP0180003A3 (de) * | 1984-09-28 | 1988-01-13 | Siemens Aktiengesellschaft | Bipolarer Leistungstransistor |
EP0176771A3 (de) * | 1984-09-28 | 1988-01-13 | Siemens Aktiengesellschaft | Bipolarer Leistungstransistor mit veränderbarer Durchbruchspannung |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
US5736863A (en) * | 1996-06-19 | 1998-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL84061C (pl) * | 1948-06-26 | |||
US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
US3097308A (en) * | 1959-03-09 | 1963-07-09 | Rca Corp | Semiconductor device with surface electrode producing electrostatic field and circuits therefor |
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
NL260481A (pl) * | 1960-02-08 | |||
NL265382A (pl) * | 1960-03-08 | |||
US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
US3090873A (en) * | 1960-06-21 | 1963-05-21 | Bell Telephone Labor Inc | Integrated semiconductor switching device |
NL267831A (pl) * | 1960-08-17 |
-
0
- NL NL293292D patent/NL293292A/xx unknown
-
1962
- 1962-06-11 US US201456A patent/US3243669A/en not_active Expired - Lifetime
-
1963
- 1963-04-10 GB GB14256/63A patent/GB1033537A/en not_active Expired
- 1963-05-07 DE DEF39664A patent/DE1211334B/de active Pending
- 1963-05-09 FR FR934291A patent/FR1362724A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1211334B (de) | 1966-02-24 |
GB1033537A (en) | 1966-06-22 |
US3243669A (en) | 1966-03-29 |
FR1362724A (fr) | 1964-06-05 |